Zobrazeno 1 - 10 of 57 pro vyhledávání: '"G. A. Pond"'
1
Cardiac Morbidity Following Chemoradiation in Stage III Non-small Cell Lung Cancer Patients: A Population-Based Cohort Study
Autor: E K, Donovan, G R, Pond, H, Seow, P M, Ellis, A, Swaminath
Publikováno v: Clinical Oncology. 35:e182-e188
To assess the risk of cardiac toxicity following radical radiotherapy in advanced lung cancer patients.Patients with a diagnosis of stage III non-small cell lung cancer (NSCLC) receiving chemoradiotherapy were extracted from a population-based cohort
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd794520d9ea3b61eeb5da0bc6f60bed
https://doi.org/10.1016/j.clon.2022.11.019
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2
Present status and future of theoretical work on point defects and diffusion in semiconductors
Autor: C. G. Morgan-Pond
Publikováno v: Journal of Electronic Materials. 20:399-408
A brief description of the theoretical methods commonly used to investigate point defects and diffusion is given. The current status of theoretical understanding of hydrogen diffusion in silicon, self-diffusion in silicon, and Hg and Cd diffusion in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c7aeb1cb21495bc82e5aaa87fa0019d
https://doi.org/10.1007/bf02657819
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3
Point defects with lattice distortion in CdTe and HgCdTe
Autor: J. T. Schick, C. G. Morgan‐Pond
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1108-1111
Results of self‐consistent, tight‐binding supercell calculations of electronic defect levels and relaxation about defects for As, Sb, and Te interstitials in CdTe and for the Hg vacancy in HgTe are presented. Trends in the localized defect levels
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62230a2fc4fdee9a275a7aca5e70b39f
https://doi.org/10.1116/1.576969
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4
Structural energies of defects in CdTe and HgCdTe
Autor: J. T. Schick, C. G. Morgan‐Pond
Publikováno v: Semiconductor Science and Technology. 5:S81-S85
Self-consistent tight-binding supercell calculations of localised defect levels and nearest-neighbour relaxations are presented for Cd, Hg and In interstitials at tetrahedral and hexagonal sites in CdTe and HgTe. The mechanisms driving the relaxation
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b214985da9937cb6c5e99783a2bc24d
https://doi.org/10.1088/0268-1242/5/3s/018
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5
Direct medical costs attributable to osteoporotic fractures
Autor: S. E. Gabriel, A. N. A. Tosteson, C. L. Leibson, C. S. Crowson, G. R. Pond, C. S. Hammond, L. J. Melton, III
Publikováno v: Osteoporosis international : a journal established as result of cooperation between the European Foundation for Osteoporosis and the National Osteoporosis Foundation of the USA. 13(4)
Osteoporotic fractures are a major cause of morbidity in the elderly, the most rapidly growing segment of our population. We characterized the incremental direct medical costs following such fractures in a population-based cohort of men and women in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a85c66d92fe623729e26225f7132d480
https://pubmed.ncbi.nlm.nih.gov/12035765
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7
Outcome of intraarterial urokinase for acute vascular occlusion
Autor: F N, Parent, J J, Piotrowski, V M, Bernhard, G D, Pond, T S, Pabst, D A, Bull, G C, Hunter, K E, McIntyre
Publikováno v: The Journal of cardiovascular surgery. 32(5)
Intraarterial urokinase (IAUK) was administered to 33 patients on 40 occasions for the treatment of acute extremity ischemia and long-term patency was assessed. Lysis was successful in 39 of the 40 cases (95%). Occlusive thrombus was cleared in 12 of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::0637333dbceeedcfa850ce45f3bcf2f0
https://pubmed.ncbi.nlm.nih.gov/1939333
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10
Formation mechanisms of localized interstitial states in tetrahedrally bonded semiconductors
Autor: C. G. Morgan-Pond, S. Goettig
Publikováno v: Physical review. B, Condensed matter. 42(18)
La methode proposee prend en compte l'interaction des etats interstitiels avec leurs plus proches voisins, ainsi que les couplages covalents, polaires, et metalliques dans le petit systeme des liaisons entourant le defaut. On etudie les niveaux profo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45657451c4ce515bddc3459aaa4e1fb4
https://pubmed.ncbi.nlm.nih.gov/9995480
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