Zobrazeno 1 - 10
of 12
pro vyhledávání: '"G. A. Patrizi"'
Publikováno v:
Environmental Geology. 32:1-8
The Tyrrhenian resort of S. Marinella (central Italy) is subjected to significant anthropogenic pressures during the summer vacation period, a common situation all along the Italian coast. Located 65 km NW of Rome on the southern slopes of the Tolfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::175ad04ce930ed564c5015d2d44fe280
https://doi.org/10.1007/s002540050187
https://doi.org/10.1007/s002540050187
Autor:
P. Silvestre, Mowafak Al-Jassim, L.M. Woods, Kim M. Jones, P. Thiagarajan, G. Y. Robinson, G. A. Patrizi
Publikováno v:
Journal of Electronic Materials. 23:1229-1233
Quantum well (QW) structures consisting of InGaAsP wells and InGaAsP barriers grown by gas-source molecular beam epitaxy have been examined by low temperature photoluminescence (PL) in order to evaluate the contributions of compositional fluctuations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b76fa974e815d92fc7f740311a170ad
https://doi.org/10.1007/bf02649974
https://doi.org/10.1007/bf02649974
Publikováno v:
Journal of Applied Physics. 79:7161-7163
We present an observation of the Wannier–Stark effect in a strained InGaAs/InGaP superlattice grown on a GaAs substrate. A blueshift of the effective absorption edge is observed in room and low‐temperature photocurrent and transmission measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::863a58da9f88aa2b4e19814305326189
https://doi.org/10.1063/1.361487
https://doi.org/10.1063/1.361487
Autor:
X.P. Jiang, G. A. Patrizi, D.L. Coblentz, G. Y. Robinson, J. M. Vandenberg, S. Forouhar, Henryk Temkin, P. Thiagarajan, R. A. Logan
Publikováno v:
Applied Physics Letters. 65:1689-1691
We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice‐matched (or also strained) quaternary barriers. This requires interpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1044a4c9ba9c1b33092888f5ecd99c14
https://doi.org/10.1063/1.112887
https://doi.org/10.1063/1.112887
Autor:
H. Temkin, X.P. Jiang, J. M. Vandenberg, G. Y. Robinson, D. Coblentz, Ralph A. Logan, G. A. Patrizi, S. Forouhar, P. Thiagarajan
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
We extend the phenomenological deformation potential strain model previously applied to InGaAs wells with InP barriers to quaternary wells and barriers. The model allows for any quaternary composition in the well or barrier, with the strain of either
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c784c79efd44f56d9bff5110bc53c82a
https://doi.org/10.1109/iciprm.1994.328270
https://doi.org/10.1109/iciprm.1994.328270
Publikováno v:
Journal of Applied Physics. 74:1431-1433
Deep‐level transient spectroscopy has been used to characterize n‐type In0.48Ga0.52P grown by gas‐source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si‐doped material, with the thermal emissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::518473a2de918e39ae4eb904c0f170be
https://doi.org/10.1063/1.355330
https://doi.org/10.1063/1.355330
Publikováno v:
Applied Physics Letters. 61:81-83
The Schottky barrier energies for both n‐type and p‐type materials have been measured for the wide band‐gap alloys InGaP and InGaAlP when lattice matched to GaAs. A gold metallization was used and the barrier energy was measured on chemically e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7de7055e060c18ea68b7b3be264238a
https://doi.org/10.1063/1.107621
https://doi.org/10.1063/1.107621
Publikováno v:
Electronics Letters. 29:535
Deep level transient spectroscopy has been used to characterise p-type In/sub 0.48/Ga/sub 0.52/P grown by gas-source molecular beam epitaxy. Three hole traps were detected in Be-doped material, with thermal emission energies of approximately 0.2-0.3,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827bce27533f70e9339e18dee4e6fcfa
https://doi.org/10.1049/el:19930357
https://doi.org/10.1049/el:19930357
Publikováno v:
Electronics Letters. 27:2363
Multiquantum well pin photodiodes have been fabricated using InGaP/GaAs grown by gas-source MBE. The room temperature photocurrent spectrum of the diodes exhibits strong excitonic absorption at wavelengths near 860 nm, and a large change in the photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b60d0718b153b9f0ff33f2ca8e03d155
https://doi.org/10.1049/el:19911464
https://doi.org/10.1049/el:19911464