Zobrazeno 1 - 3
of 3
pro vyhledávání: '"G. A. Naida"'
Publikováno v:
Wide Band Gap Electronic Materials ISBN: 9789401040785
Epitaxial aluminium nitride and gallium nitride films on sapphire substrate \( (\bar 1012) \) were prepared by pyrolysis of complex compounds of ammonia and halide of A1 or Ga. The quality of heteroepitaxial structures \((11\bar{2}6) {\text{AIN}} / (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f269a04e62bb681bc350bb528691bbba
https://doi.org/10.1007/978-94-011-0173-8_32
https://doi.org/10.1007/978-94-011-0173-8_32
Publikováno v:
Physica Status Solidi (a). 104:K47-K51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd904b587eb8b8cfbcd3c74a73c2479e
https://doi.org/10.1002/pssa.2211040146
https://doi.org/10.1002/pssa.2211040146
Publikováno v:
Crystal Research and Technology. 18:53-59
Orientation relationships of aluminium nitride on sapphire (1126) AlN/(0112) Al2O3 have been defined more exactly by X-ray diffractometry techniques. It has been found that, depending on the substrate misorientation from the surface plane (0112), the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6bcd1ca2ec11d3cae876be477de228e
https://doi.org/10.1002/crat.2170180110
https://doi.org/10.1002/crat.2170180110