Zobrazeno 1 - 3
of 3
pro vyhledávání: '"G. A. Mattiussi"'
Publikováno v:
Journal of The Electrochemical Society. 140:2332-2338
Negative- and positive-tone e-beam resists have been exposed by focused beams of Si ++ and Be ++ ions. The resolution of the negative resist, Shipley SAL601-ER7, was better than 0.2 μm and vertical sidewalls were achieved. A dose of 2×10 12 ions cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::805413ad8e280275763690ea0023b52b
https://doi.org/10.1149/1.2220819
https://doi.org/10.1149/1.2220819
Publikováno v:
MRS Proceedings. 76
Ion beam mixing has been used to form layers of titanium disilicide on Si wafers. Doses of Ge+ up to 1×1016 ions/cm2 were implanted at 140 keV through 51 nm of sputtered Ti. The substrate was held at different temperatures; 150°C, 300°C and 400°C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c2759162389a38eab93a427b44fdb12
https://doi.org/10.1557/proc-76-323
https://doi.org/10.1557/proc-76-323
Autor:
G. A. Mattiussi
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4:1352
The need for and use of ion beam mixing of metal silicides for very large scale integrated (VLSI) circuit technology is discussed in the form of a literature review and tutorial paper. Where possible, the formation of titanium disilicide (TiSi2) is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155ea7b60d413aa000c8ce7ac4cb8a05
https://doi.org/10.1116/1.583457
https://doi.org/10.1116/1.583457