Zobrazeno 1 - 6
of 6
pro vyhledávání: '"G. A. Koné"'
Autor:
Cyrille G. B. Koné
Publikováno v:
Présence Africaine. :675-686
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d2fba97ce571a8f9a5007257d26bc5f
https://doi.org/10.3917/presa.195.0675
https://doi.org/10.3917/presa.195.0675
Autor:
Jean Godin, Cristell Maneux, Brice Grandchamp, François Marc, Muriel Riet, Sudip Ghosh, Thomas Zimmer, Virginie Nodjiadjim, G. A. Koné, Jean-Yves Dupuy
Publikováno v:
Microelectronics Reliability. 51:1736-1741
The reliability of InP/InGaAs DHBT under high collector current densities and low junction temperatures is analyzed and modeled. From the Gummel characteristics, we observe several types of device degradation, resulting from the long term changes of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::578d80c389a79fe525010dc92239b6df
https://doi.org/10.1016/j.microrel.2011.07.045
https://doi.org/10.1016/j.microrel.2011.07.045
Autor:
François Marc, Jean Godin, Brice Grandchamp, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, G. A. Koné, Cristell Maneux, C. Hainaut
Publikováno v:
Microelectronics Reliability. 51:1730-1735
We report on the reliability of InGaAs/InP DHBT technology which has applications in very high-speed ICs (over 100 Gbits/s). This work presents the results of accelerated aging tests under thermal and electrical stresses performed on HBT up to 2000 h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::382f82e3a555e6303af4d4b59879db7e
https://doi.org/10.1016/j.microrel.2011.07.073
https://doi.org/10.1016/j.microrel.2011.07.073
Autor:
C. Hainaut, François Marc, Jean Godin, G. A. Koné, Cristell Maneux, Virginie Nodjiadjim, Brice Grandchamp, Nathalie Labat, Thomas Zimmer
Publikováno v:
Microelectronics Reliability. 50:1548-1553
We report on the reliability of InP HBT technology which has applications in very high-speed ICs. This work presents the storage accelerated aging tests results performed on InP/InGaAs HBT at stress temperatures of 180, 210 and 240 °C up to 3000 h.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f43aaf5b7e4e76629f324d1fd0364e5f
https://doi.org/10.1016/j.microrel.2010.07.141
https://doi.org/10.1016/j.microrel.2010.07.141
Autor:
Hassan Maher, Cristell Maneux, G. A. Koné, Thomas Zimmer, P. Frijlink, Brice Grandchamp, Nathalie Labat
Publikováno v:
2012 International Conference on Indium Phosphide and Related Materials.
We report on the reliability of InP/GaAsSb/InP DHBTs dedicated to very high-speed ICs applications. The devices under tests were fabricated by OMMIC [1]. Accelerated aging tests under thermal stress were previously performed on the same technology an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8130d30ffef15cd6b0c9ac3d3a51403b
https://doi.org/10.1109/iciprm.2012.6403359
https://doi.org/10.1109/iciprm.2012.6403359
Autor:
Sudip Ghosh, Cristell Maneux, Jean Godin, Brice Grandchamp, Bertrand Ardouin, Virginie Nodjiadjim, Jean-Yves Dupuy, Muriel Riet, G. A. Koné, François Marc
Publikováno v:
ESSCIRC
This paper presents a new physics-based method for reliability prediction and modeling of Integrated Circuits (ICs). By implementing transistor degradation mechanisms via differential equations in the transistor compact model, the aging of the circui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c240ddf80ea4284a9e1d5c16be034f9
https://hal.archives-ouvertes.fr/hal-01002143
https://hal.archives-ouvertes.fr/hal-01002143
