Zobrazeno 1 - 10
of 31
pro vyhledávání: '"G. A. DOMRACHEV"'
Autor:
N. M. Semenov, V. A. Egorov, A. N. Moskvichev, A. S. Rodionov, K. V. Kremlev, S. Y. Ketkov, G. A. Domrachev, V. N. Perevezentsev, A. M. Obiedkov, A. A. Moskvichev, B. S. Kaverin, S. A. Gusev
Publikováno v:
Letters on Materials. 2:152-156
Autor:
O. V. Kol’chik, G. A. Domrachev, L. G. Donracheva, N. B. Mel’nikova, A. A. Volkov, I. A. Pegova
Publikováno v:
Pharmaceutical Chemistry Journal. 42:564-570
The formation of chelate complexes of dihydroqercetin (DHQ) with zinc and chromium asparaginates in aqueous solution is established and their interaction with a lecithin monolayer is estimated. On the basis of analysis of the surface pressure-molecul
Publikováno v:
Doklady Physical Chemistry. 444:93-95
Publikováno v:
Doklady Physical Chemistry. 440:168-170
The IR spectra of organic liquids often contain “extra” absorption bands that cannot be explained on the basis of fundamental mode analysis [5, 6]. These bands have been assigned in the literature to overtones or combination bands, i.e., anharmon
Publikováno v:
Russian Journal of General Chemistry. 71:865-872
The emission properties in the range 200-600 nm of the low-temperature plasma in mixtures of He with Et2Zn and H2Se vapors were studied. The spectrum of emission accompanying decomposition of Et2Zn includes 26 identified lines of Zn atoms and strong
Publikováno v:
Doklady Biochemistry and Biophysics. 401:108-110
Autor:
Georgii K. Fukin, Yu. Yu. Lebedinskii, Igor L. Fedushkin, Andrei Zenkevich, M Fanciulli, Claudia Wiemer, G. Scarel, G. Pavia, G. A. Domrachev
Publikováno v:
Zeitschrift für anorganische und allgemeine Chemie (1950) 633 (2007): 2097–2103.
info:cnr-pdr/source/autori:Scarel, G; Wiemer, C; Fanciulli, M; Fedushkin, IL; Fukin, GK; Domrachev, GA; Lebedinskii, Y; Zenkevich, A; Pavia, G/titolo:[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films/doi:/rivista:Zeitschrift für anorganische und allgemeine Chemie (1950)/anno:2007/pagina_da:2097/pagina_a:2103/intervallo_pagine:2097–2103/volume:633
info:cnr-pdr/source/autori:Scarel, G; Wiemer, C; Fanciulli, M; Fedushkin, IL; Fukin, GK; Domrachev, GA; Lebedinskii, Y; Zenkevich, A; Pavia, G/titolo:[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films/doi:/rivista:Zeitschrift für anorganische und allgemeine Chemie (1950)/anno:2007/pagina_da:2097/pagina_a:2103/intervallo_pagine:2097–2103/volume:633
The molecular structure of tris[bis(trimethylsilyl)amido]-lutetium, [(Me3Si)(2)N](3)Lu, is investigated. An agostic interaction is found between Lu and the Si atom of the silyl group. The performance of [(Me3Si)(2)N](3)Lu as precursor to deposit Lu s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1ebf0131afe1a68adb1834d081245eb
http://www.cnr.it/prodotto/i/1947
http://www.cnr.it/prodotto/i/1947
Autor:
Andrei Zenkevich, Marco Fanciulli, Sabina Spiga, G. Pavia, Igor L. Fedushkin, Yu.Yu. Lebedinskii, G. Tallarida, Giovanna Scarel, G. A. Domrachev, E. Bonera, Georgii K. Fukin, Gabriele Seguini, Claudia Wiemer
Publikováno v:
Journal of The Electrochemical Society. 153:F271
Rare-earth silicates are promising materials for future microelectronic devices based on high dielectric constant dielectrics. In this work, we report the investigation of Lu silicate films deposited using atomic layer deposition on Si(100). The film
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Publikováno v:
Russian Chemical Bulletin; Sep2004, Vol. 53 Issue 9, p1932-1937, 6p