Zobrazeno 1 - 10
of 36
pro vyhledávání: '"G. A. Antypas"'
Publikováno v:
C R C Critical Reviews in Solid State Sciences. 5:577-583
(1975). Field-assisted photoemission from an Inp/IngaAsp/Inp cathode. C R C Critical Reviews in Solid State Sciences: Vol. 5, No. 4, pp. 577-583.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bc6f4afaf0b045fc30c6629711876ba
https://doi.org/10.1080/10408437508243514
https://doi.org/10.1080/10408437508243514
Publikováno v:
Journal of Electronic Materials. 8:485-491
Low temperature photoluminescence and electrical measurements on bulk grown polycrystalline and single crystal InP indicate the purity and crystal perfection to be equivalent to that of LPE and VPE samples.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::615a581617063254fbc48a79dad901bc
https://doi.org/10.1007/bf02652400
https://doi.org/10.1007/bf02652400
Publikováno v:
Journal of Electronic Materials. 3:635-644
Published data for the composition dependence of the room-temperature bandgap (Eg) and lattice constant (ao) in the pseudobinary GayIn1-yAs, GayIn1-yP, GaAsxPl-x, and InAsxPl-x systems have been used to derive the following equations for the quaterna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17511a1be2a3d5812f05db0d5befcf5f
https://doi.org/10.1007/bf02655291
https://doi.org/10.1007/bf02655291
Publikováno v:
IEEE Transactions on Electron Devices. 27:1244-1250
Photoemission data and model calculations are presented for a field-assisted semiconductor photoemitter which has achieved reflection-mode quantum efficiencies as high as 8.0 percent at 1.55 µm. The cathodes are p-p heterostructures employing lattic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e45b572efc0f174c8c0db95da3d3546
https://doi.org/10.1109/t-ed.1980.20015
https://doi.org/10.1109/t-ed.1980.20015
Publikováno v:
Journal of Vacuum Science and Technology. 13:932-937
The conditions of growth of In1−xGaxAsyP1−y lattice‐matched to InP by the liquid‐phase epitaxy technique on (111) B‐oriented substrates have been analyzed in this paper. The epilayer composition has been varied from InP to In0.53Ga0.47As. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206ee9e1a6ac40da498661274cd5a0f4
https://doi.org/10.1116/1.569024
https://doi.org/10.1116/1.569024
Publikováno v:
Journal of Vacuum Science and Technology. 15:1483-1487
A field‐assisted photocathode has been made which has a reflection yield quantum efficiency of ∠1% out to a wavelength of 1.6 μ. The cathode is a heterojuncation InP/InGaAs/InP structure fabricated by a hybrid VPE/LPE process. Photoelectrons gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b05f18ccf789b40227865b1d335218
https://doi.org/10.1116/1.569771
https://doi.org/10.1116/1.569771
Publikováno v:
Journal of Applied Physics. 35:3452-3455
The positive ion current emitted by heated filaments of high‐purity Fe displayed sharp maxima when the metal passed through the structural transformation temperature. The height of the maxima varied with previous flashing temperatures and with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69fba11647f438779598d93fcfba2363
https://doi.org/10.1063/1.1713248
https://doi.org/10.1063/1.1713248
Publikováno v:
Journal of Applied Physics. 42:580-586
Zinc‐doped InAsP liquid epitaxial layers with bandgaps between 0.4 and 1.34 eV were grown on InAs and InP substrates. The grown layers were 2–4‐μ thick with mirror‐smooth as‐grown surfaces. Preliminary phase diagram calculations based on D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55bcd7e1a47b6cae5d6b1dc714feec74
https://doi.org/10.1063/1.1660067
https://doi.org/10.1063/1.1660067
Publikováno v:
Journal of Applied Physics. 42:4976-4980
Electron energy loss in the band‐bending region of the p‐type III–V semiconductor in a III–V photocathode is an important factor in determining the escape probability and the optimum doping. From measurements of photoelectric yield near thres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df48f37f64b7abdf4e3aaaa1db90cba8
https://doi.org/10.1063/1.1659883
https://doi.org/10.1063/1.1659883
Autor:
G. A. Antypas, L. W. James
Publikováno v:
Journal of Applied Physics. 41:2165-2171
The ternary‐phase diagram of GaAsSb has been calculated using Darken's quadratic formalism for a ternary liquid and assuming a regular solid solution. Liquid epitaxial layers of GaAsxSb1−x have been grown in the range 0.75>x>1 on {100} and {111}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc35ab1725ed66790c40b573893d88d
https://doi.org/10.1063/1.1659183
https://doi.org/10.1063/1.1659183