Zobrazeno 1 - 7
of 7
pro vyhledávání: '"G-H. M. Ma"'
Publikováno v:
Physical Review B. 45:11067-11084
An in-depth study has been performed of the nucleation of diamond on silicon by bias-enhanced microwave plasma chemical vapor deposition. Substrates were pretreated by negative biasing in a 2% methane-hydrogen plasma. The bias pretreatment enhanced t
Publikováno v:
Journal of Materials Research. 5:2367-2377
Diamond films grown by Bias-Controlled Hot Filament Chemical Vapor Deposition (BCCVD) on silicon (Si) substrates were characterized by Transmission Electron Microscopy (TEM). Both plan-view and cross-sectional TEM samples were made from diamond films
Autor:
Jeffrey T. Glass, John C. Angus, J.E. Butler, A. Argoitia, Michael W. Geis, R. Pryor, C. J. Robinson, Henry I. Smith, G.‐H. M. Ma
Publikováno v:
Applied Physics Letters. 58:2485-2487
The seeding for large‐area mosaic diamond films approaching single‐crystal quality is described. The technique includes patterned etching of relief structures in Si substrates, deposition from a slurry and orientation of macroscopic diamond seed
Publikováno v:
MRS Proceedings. 270
A study was performed on polycrystalline copper versus that of Si(100) utilizing a negative substrate bias to enhance diamond nucleation. The biasing pretreatment and subsequent growth of the diamond were performed via microwave plasma chemical vapor
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 49:740-741
With its large band gap and a unique combination of many excellent properties, diamond is regarded as an excellent candidate for making electronic devices for operation at high temperature. In order to fabricate diamond devices, suitable electrical c
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 48:1088-1089
The synthesis of diamond films by various low pressure methods has attracted much attention recently. The primary reasons for the great interest are diamond’s substantial potential as a high temperature semiconductor, heat sink, wear resistant coat
Publikováno v:
MRS Proceedings. 162
The growth of diamond films on Si(001), polycrystalline Ni, Mo, Ta, and W substrates by biased controlled chemical vapor deposition is discussed. Biasing effects were examined using the Si(001) substrates. The film quality as judged by Raman spectros