Zobrazeno 1 - 5
of 5
pro vyhledávání: '"G V Shepekina"'
Publikováno v:
Inorganic Materials. 46:1526-1528
A procedure to determine the composition of InxGa1 − xSb solid solution by X-ray diffraction is described. In order to calculate the indium content in a solid solution, an expression is proposed which relates the cell size of an undeformed layer wi
Autor:
M G Mil'vidskiĭ, V V Bezotosnyĭ, B N Sverdlov, G V Shepekina, P G Eliseev, E G Shevchenko, L M Dolginov
Publikováno v:
Soviet Journal of Quantum Electronics. 10:1146-1148
Continuous-wave heterojunction lasers utilizing an isoperiodic system of quaternary GalnPAs solid solutions, fabricated by liquid-phase epitaxy on p-lnP substrates, were built and investigated. The lasers operated at room temperature in the 1.24–1.
Autor:
I. N. Shishkin, V P Duraev, E T Nedelin, G V Shepekina, B N Sverdlov, P G Eliseev, V V Bezotosnyĭ
Publikováno v:
Soviet Journal of Quantum Electronics. 11:1201-1202
Life tests were made on GalnPAs/lnP heterostructures designed for use in injection lasers and diodes emitting in the 1.2–1.3 µ range. The step test method was used to investigate noncoherent emission from stripe diodes at temperatures 25–80 °C.
Publikováno v:
Soviet Journal of Quantum Electronics. 11:1208-1209
An experimental investigation was made of the influence of the material used to bury mesastripe GaInPAs--InP laser heterostructures emitting in the 1.3 ..mu.. wavelength range on the order of the transverse modes of the laser radiation. Indium phosph
Autor:
V A Skripkin, V I Shveĭkin, E G Shevchenko, L M Dolginov, P G Eliseev, A A Shelyakin, A E Drakin, M G Vasil'ev, G V Shepekina, A V Ivanov, B N Sverdlov, V P Konyaev
Publikováno v:
Soviet Journal of Quantum Electronics. 14:431-432
Injection lasers with a three-layer waveguide emitting at the wavelength of about 1.3 μ were made and investigated. The liquid phase epitaxy method was used to form heterostructures on n- and p-type InP substrates and these heterostructures had lowe