Zobrazeno 1 - 10
of 49
pro vyhledávání: '"G V Klimko"'
Autor:
E. V. Kontrosh, Viacheslav M. Andreev, V. S. Yuferev, V. S. Kalinovskii, G. V. Klimko, D. Y. Kazantsev, Stefan Ivanov, Boris Ya. Ber
Publikováno v:
Semiconductors. 54:355-361
The creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive p–n junctions is an important task in the development of multijunction photoconverters (III–V) of h
Autor:
A. A. Toropov, M. V. Rakhlin, E. A. Evropeytsev, Aidar I. Galimov, K. G. Belyaev, G. V. Klimko
Publikováno v:
Acta Physica Polonica A. 136:613-616
Autor:
S I Troshkov, M. V. Rakhlin, M. M. Kulagina, K. G. Belyaev, Ya. V. Terent’ev, Stefan Ivanov, Yu. A. Guseva, Irina V. Sedova, G. V. Klimko, A. A. Toropov, Yu. M. Zadiranov
Publikováno v:
JETP Letters. 109:145-149
The statistics of photon correlations in the emission of single InAs/AlGaAs quantum dots grown by molecular beam epitaxy and fitted with AlGaAs waveguide nanoantennas for efficient extraction of radiation is investigated. A single-photon source for t
Publikováno v:
Technical Physics Letters. 44:1013-1016
Photovoltaic characteristics of heterostructure AlxGa1 – xAs/GaAs p–i–n photodiodes fabricated by molecular-beam epitaxy have been studied. Efficiencies of 50% were reached in conversion of monochromatic light in the photovoltaic mode at power
Publikováno v:
Physics of the Solid State. 60:691-694
The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photolumi
Autor:
Ya. V. Terent’ev, V. Kh. Kaibyshev, Sergei Ivanov, A. A. Toropov, I. V. Sedova, S. V. Sorokin, G. V. Klimko
Publikováno v:
Journal of Experimental and Theoretical Physics. 126:210-216
The processes of electron spin dynamics in a hybrid nonresonance structure, which includes a layer of a diluted magnetic II–Mn–VI semiconductor and an asymmetric quantum well (QW) of a nonmagnetic III–V semiconductor, are experimentally studied
Publikováno v:
Journal of Physics: Conference Series. 2103:012194
Investigations of the temperature stability of the peak tunneling current density of connecting tunneling diodes, which are necessary for the creation on their basis of multijunction photoconverters of powerful optical radiation, have been carried ou
Autor:
Irina V. Sedova, Ivan Mukhin, G. V. Klimko, A. A. Toropov, S. V. Sorokin, Sergei Gronin, Stefan Ivanov, M. V. Rakhlin, K. G. Belyaev
Publikováno v:
Journal of Crystal Growth. 477:127-130
We report on pseudomorphic MBE growth of CdTe/Zn(Mg)(Se)Te quantum dot (QD) structures on InAs(100) substrates and studies of their structural and optical properties. The QDs were fabricated by using a thermal activation technique comprising depositi
Publikováno v:
Semiconductors. 52:511-513
We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 μm, including red
Publikováno v:
Journal of Physics: Conference Series. 1851:012021
Characteristics of double-cascade nonmonolithic p-i-n AlGaAs/GaAs photovoltaic converters of high-power laser radiation, electrically combined with n++-GaAs/i-GaAs/i-AlGaAs/p++-AlGaAs tunnel diodes, have been studied. The AlGaAs/GaAs p-i-n structures