Zobrazeno 1 - 10
of 26
pro vyhledávání: '"G Tchutchulashvili"'
Autor:
G. Tchutchulashvili, M. Sobanska, Roman Minikayev, Jaroslaw Z. Domagala, Jolanta Borysiuk, A. Wierzbicka, K. Klosek, Zbigniew R. Zytkiewicz
Publikováno v:
Applied Surface Science. 425:1014-1019
X-ray diffraction measurements with the use of both laboratory and synchrotron X-ray sources and transmission electron microscopy have been applied to study two types of GaN nanowires grown by plasma assisted molecular beam epitaxy on Si (001) substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23da5cb978358fe4f4349791158a605
https://doi.org/10.1016/j.apsusc.2017.07.075
https://doi.org/10.1016/j.apsusc.2017.07.075
Publikováno v:
Crystal Growth & Design. 16:7205-7211
Surprisingly long incubation times for the self-induced formation of GaN nanowires on different substrates can reach hundreds of minutes and remain a mystery in GaN crystal growth. Herein, we examine the incubation times of GaN islands that subsequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7470ebdff31c32b7dcfe5f1b7e673cf3
https://doi.org/10.1021/acs.cgd.6b01396
https://doi.org/10.1021/acs.cgd.6b01396
Autor:
K. Klosek, Krzysztof P. Korona, M. Sobanska, G. Tchutchulashvili, F E Sosada, Piotr A. Dróżdż, Zbigniew R. Zytkiewicz
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 30(31)
Optical phenomena in an ensemble of high-quality GaN nanowires (NWs) grown on a Si substrate have been studied by reflectance and time-resolved luminescence. Such NWs form a structure that acts as a virtual layer that specifically reflects and polari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f1de99d69b423440227407133c90ea9
https://pubmed.ncbi.nlm.nih.gov/29939153
https://pubmed.ncbi.nlm.nih.gov/29939153
Autor:
Sylwia Gieraltowska, M. Sobanska, G. Tchutchulashvili, Zbigniew R. Zytkiewicz, Jolanta Borysiuk, K. Klosek, A. Wierzbicka
Publikováno v:
Journal of Crystal Growth. 401:657-660
We report on catalyst-free growth of GaN nanowires (NWs) by plasma-assisted molecular beam epitaxy on Si(111) substrates with a thin amorphous Al 2 O 3 buffer layers deposited at low temperature by atomic layer deposition. We show that nanowires obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1bfd5f61fbd56e3181a3c60904a951d
https://doi.org/10.1016/j.jcrysgro.2014.01.007
https://doi.org/10.1016/j.jcrysgro.2014.01.007
Autor:
Henryk Teisseyre, L. Klopotowski, K. Klosek, M. Sobanska, Zbigniew R. Zytkiewicz, G. Tchutchulashvili
Publikováno v:
Thin Solid Films. 534:107-110
A comprehensive analysis of operating parameters of Addon RF nitrogen plasma source was made in order to determine how a ratio of different active nitrogen species depends on operating parameters of the source such as supplied power and nitrogen flow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684e81ba98b628d98ca0fc835368e511
https://doi.org/10.1016/j.tsf.2013.02.013
https://doi.org/10.1016/j.tsf.2013.02.013
Autor:
Sylwia Gieraltowska, Lutz Geelhaar, Oliver Brandt, Zbigniew R. Zytkiewicz, M. Sobanska, G. Tchutchulashvili, Sergio Fernández-Garrido
Publikováno v:
Nanotechnology. 27:325601
We present a comprehensive description of the self-assembled nucleation and growth of GaN nanowires (NWs) by plasma-assisted molecular beam epitaxy on amorphous Al x O y buffers (a-Al x O y ) prepared by atomic layer deposition. The results are compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b73487751d95e6a4a8d5e6efc638940
https://doi.org/10.1088/0957-4484/27/32/325601
https://doi.org/10.1088/0957-4484/27/32/325601
Autor:
Piotr Dłużewski, Jolanta Borysiuk, Sławomir Kret, K. Klosek, Zbigniew R. Zytkiewicz, E. Lusakowska, A Cabaj, A. Wierzbicka, Anna Reszka, M. Sobanska, G. Tchutchulashvili
Publikováno v:
Nanotechnology. 24(3)
An arrangement of self-assembled GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy on a Si(111) substrate is studied as a function of the temperature at which the substrate is nitridized before GaN growth. We show that the NWs grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1dd7be25f2194bd693cf8b8d94c85411
https://pubmed.ncbi.nlm.nih.gov/23262581
https://pubmed.ncbi.nlm.nih.gov/23262581
Publikováno v:
Journal of Applied Physics. 118:184303
Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous AlxOy buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-AlxOy are very similar to those observed on s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520dddb337ad291dc7eb498d35a2a191
https://doi.org/10.1063/1.4935522
https://doi.org/10.1063/1.4935522
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Akademický článek
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