Zobrazeno 1 - 10
of 44
pro vyhledávání: '"G Steude"'
Publikováno v:
physica status solidi (b). 216:1039-1047
We studied high purity GaAs grown by optically detected cyclotron resonance (ODCR) using microwave frequencies at 36 and 140 GHz. The samples were grown by the metalorganic vapor phase epitaxy (MOVPE) using nitrogen as a carrier gas. The ODCR linewid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f99e3a6f4f606533e5254c097f6ac70
https://doi.org/10.1002/(sici)1521-3951(199912)216:2<1039::aid-pssb1039>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199912)216:2<1039::aid-pssb1039>3.0.co
Publikováno v:
physica status solidi (b). 216:187-191
AlGaN on GaN epitaxial films with Al contents between 6% and 76% were investigated by stationary photoluminescence experiments which allows to determine the dependence of the energy gap on alloy composition. The observed increase of the luminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed58ddb9dafdb1d945c352a7b3a2f33
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<187::aid-pssb187>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<187::aid-pssb187>3.0.co
Publikováno v:
Scopus-Elsevier
GaN films were grown epitaxially on sapphire and 6H-SiC substrates by low-pressure chemical vapor deposition (LPCVD) using gallium(III) chloride and ammonia as gallium and nitrogen precursor, respectively. The properties of these samples were examine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a26442fe5ec45a5a2dfc7400a6306d69
https://doi.org/10.1016/s0022-0248(98)00285-1
https://doi.org/10.1016/s0022-0248(98)00285-1
Autor:
Jürgen Christen, G Steude, Hartmut Witte, I. Dirnstorfer, Bruno K. Meyer, W Mönch, T.U Kampen, M. Topf, D. Meister, A. Krtschil, S. Fischer
Publikováno v:
Scopus-Elsevier
We report on the optical, electrical and structural properties of GaN films heteroepitaxially grown by low pressure chemical vapor deposition on 6H-SiC substrates. We employed photoluminescence (PL), Hall effect measurements, scanning tunneling micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48dfce517b73f1133a34a4b881df2bab
https://doi.org/10.1016/s0921-5107(97)00194-3
https://doi.org/10.1016/s0921-5107(97)00194-3
Autor:
G. Steude, D. M. Hofmann, J. Söllner, W. Stadler, M. Drechsler, Michael Heuken, Bruno K. Meyer, W. Taudt, D. Volm
Publikováno v:
Journal of Crystal Growth. 159:410-413
We studied ZnSe single quantum wells with well widths from 4 to 1 nm by optically detected cyclotron resonance (ODCR). In the samples grown by metal organic vapour phase epitaxy, where the residual shallow donor concentration is still of the order of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21f11cd4a7f23aa7a628e92f3e641edc
https://doi.org/10.1016/0022-0248(95)00733-4
https://doi.org/10.1016/0022-0248(95)00733-4
Autor:
Bruno K. Meyer, Hiroshi Amano, Isamu Akasaki, G. Steude, A. Göldner, Axel Hoffmann, Frank Bertram, Jürgen Christen
Publikováno v:
Applied Physics Letters. 74:2456-2458
We investigated coherently strained AlxGa1−xN/GaN heterostructures (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0e2e23b18ef707e694134e58f1dcf3
https://doi.org/10.1063/1.123879
https://doi.org/10.1063/1.123879
Autor:
Philip G, Steude
Publikováno v:
Journal of the South Carolina Medical Association (1975). 103(3)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c6b9fa214c3a39de030c543a9d122ec1
https://pubmed.ncbi.nlm.nih.gov/18189079
https://pubmed.ncbi.nlm.nih.gov/18189079
Publikováno v:
Journal of Enzyme Inhibition. 4:35-42
Peptide diazomethyl ketones, well known as specific cysteine protease inhibitors are also potent inhibitors of the microbial serine proteases thermitase (EC 3.4.21.14) and subtilisin Carlsberg (EC 3.4.21.14). The affinity of the enzymes towards the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03e7a6ab7859af6785955911dc646a12
https://doi.org/10.3109/14756369009030386
https://doi.org/10.3109/14756369009030386
Publikováno v:
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).
We investigated the influence of the growth temperature on high temperature vapor phase epitaxy of GaN. An almost direct proportionality between the growth rate and the Ga vapor pressure is observed. At optimum conditions growth rates as high as 210
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a2182e1c8db680afabf538e5eb6764
https://doi.org/10.1109/sim.1998.785066
https://doi.org/10.1109/sim.1998.785066
Autor:
Florian Kurth, Michael Schmidt, S. Fischer, F. Anders, Bruno K. Meyer, G Steude, J. Holst, Frank Bertram, Jürgen Christen, B Mensching, L. Eckey, Detlev M. Hofmann, Axel Hoffmann, B Rauschenbach, M. Topf
We studied the recombination at about 3.410 eV in nominally undoped GaN and highly oxygen-doped GaN by photoluminescence (PL) and cathodoluminescence (CL). For this line we find an upper limit for the thermal activation energy of EA⩽21±3 meV. In t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12f8ab82552104811b69eb03d14fb812
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/25917
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/25917
