Zobrazeno 1 - 10
of 360
pro vyhledávání: '"G Steude"'
Autor:
DeWolfe, Henry Todd
Publikováno v:
The American Journal of Theology, 1897 Oct 01. 1(4), 1119-1122.
Externí odkaz:
https://www.jstor.org/stable/3153341
Autor:
Broeke, James Ten
Publikováno v:
The American Journal of Theology, 1899 Apr 01. 3(2), 423-423.
Externí odkaz:
https://www.jstor.org/stable/3152591
Autor:
Henry Todd DeWolfe
Publikováno v:
The American Journal of Theology. 1:1119-1122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8e6d3d3f53dfe3f0124ff8a720f8a8d
https://doi.org/10.1086/476743
https://doi.org/10.1086/476743
Autor:
A. J. Ramaker
Publikováno v:
The American Journal of Theology. 6:406-407
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b43e0d65251242ae517292feb061ee9
https://doi.org/10.1086/478093
https://doi.org/10.1086/478093
Autor:
James Ten Broeke
Publikováno v:
The American Journal of Theology. 3:423-423
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95fc5eafa77fc3ee51c9e046ad5900ed
https://doi.org/10.1086/477133
https://doi.org/10.1086/477133
Publikováno v:
physica status solidi (b). 216:1039-1047
We studied high purity GaAs grown by optically detected cyclotron resonance (ODCR) using microwave frequencies at 36 and 140 GHz. The samples were grown by the metalorganic vapor phase epitaxy (MOVPE) using nitrogen as a carrier gas. The ODCR linewid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f99e3a6f4f606533e5254c097f6ac70
https://doi.org/10.1002/(sici)1521-3951(199912)216:2<1039::aid-pssb1039>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199912)216:2<1039::aid-pssb1039>3.0.co
Publikováno v:
physica status solidi (b). 216:187-191
AlGaN on GaN epitaxial films with Al contents between 6% and 76% were investigated by stationary photoluminescence experiments which allows to determine the dependence of the energy gap on alloy composition. The observed increase of the luminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed58ddb9dafdb1d945c352a7b3a2f33
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<187::aid-pssb187>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199911)216:1<187::aid-pssb187>3.0.co
Publikováno v:
Scopus-Elsevier
GaN films were grown epitaxially on sapphire and 6H-SiC substrates by low-pressure chemical vapor deposition (LPCVD) using gallium(III) chloride and ammonia as gallium and nitrogen precursor, respectively. The properties of these samples were examine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a26442fe5ec45a5a2dfc7400a6306d69
https://doi.org/10.1016/s0022-0248(98)00285-1
https://doi.org/10.1016/s0022-0248(98)00285-1
Autor:
Jürgen Christen, G Steude, Hartmut Witte, I. Dirnstorfer, Bruno K. Meyer, W Mönch, T.U Kampen, M. Topf, D. Meister, A. Krtschil, S. Fischer
Publikováno v:
Scopus-Elsevier
We report on the optical, electrical and structural properties of GaN films heteroepitaxially grown by low pressure chemical vapor deposition on 6H-SiC substrates. We employed photoluminescence (PL), Hall effect measurements, scanning tunneling micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48dfce517b73f1133a34a4b881df2bab
https://doi.org/10.1016/s0921-5107(97)00194-3
https://doi.org/10.1016/s0921-5107(97)00194-3
Autor:
G. Steude, D. M. Hofmann, J. Söllner, W. Stadler, M. Drechsler, Michael Heuken, Bruno K. Meyer, W. Taudt, D. Volm
Publikováno v:
Journal of Crystal Growth. 159:410-413
We studied ZnSe single quantum wells with well widths from 4 to 1 nm by optically detected cyclotron resonance (ODCR). In the samples grown by metal organic vapour phase epitaxy, where the residual shallow donor concentration is still of the order of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21f11cd4a7f23aa7a628e92f3e641edc
https://doi.org/10.1016/0022-0248(95)00733-4
https://doi.org/10.1016/0022-0248(95)00733-4