Zobrazeno 1 - 10
of 37
pro vyhledávání: '"G S, Jackson"'
Publikováno v:
Physiological and biochemical zoology : PBZ. 90(3)
African house snakes (Lamprophis fuliginosus) were used to compare the metabolic increments associated with reproduction, digestion, and activity both individually and when combined simultaneously. Rates of oxygen consumption ([Formula: see text]) an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6379c6b3dbea21d0951e8cdf4b34a63
https://pubmed.ncbi.nlm.nih.gov/28384426
https://pubmed.ncbi.nlm.nih.gov/28384426
Publikováno v:
The Journal of experimental biology. 218(Pt 22)
Snakes exhibit large factorial increments in oxygen consumption during digestion and physical activity, and long-lasting sub-maximal increments during reproduction. Under natural conditions, all three physiological states may occur simultaneously, bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a61985af6915b15da81a73de59e119f1
https://pubmed.ncbi.nlm.nih.gov/26417014
https://pubmed.ncbi.nlm.nih.gov/26417014
Publikováno v:
Physical Review A. 88
In the actively coupled (AC) pair of waveguides, the growth of small perturbations is saturated by the focusing nonlinearity that couples the linearly growing mode to the linearly damped mode. On the other hand, in the $\mathcal{PT}$-symmetric couple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd7496533783e00c86ed26d24c28ee7
https://doi.org/10.1103/physreva.88.053817
https://doi.org/10.1103/physreva.88.053817
Publikováno v:
The FASEB Journal. 27
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c5c90304ca095bfabb16aa37471dc8b
https://doi.org/10.1096/fasebj.27.1_supplement.lb736
https://doi.org/10.1096/fasebj.27.1_supplement.lb736
Publikováno v:
The FASEB Journal. 25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbdfd33d303edb95901e8cec65af5a91
https://doi.org/10.1096/fasebj.25.1_supplement.lb532
https://doi.org/10.1096/fasebj.25.1_supplement.lb532
Publikováno v:
Journal of Electronic Materials. 21:199-203
Pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (HEMT) incorporating various types of buffer layers were fabricated (D = 0.50 × 100μm) and characterized by Hall-effect measurements, low temperature photoluminescence (PL), and ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef38b05f426423c7cb253075a0d1d01d
https://doi.org/10.1007/bf02655837
https://doi.org/10.1007/bf02655837
Autor:
S S, Hasnain, L M, Murphy, R W, Strange, J G, Grossmann, A R, Clarke, G S, Jackson, J, Collinge
Publikováno v:
Journal of molecular biology. 311(3)
Here, we describe the structure of a C-terminal high-affinity copper-binding site within a truncated recombinant human PrP containing residues 91-231, which lacks the octapeptide repeat region. We show that at least two extra co-ordinating groups are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::900439ddca2b13e90ca6d1141d502121
https://pubmed.ncbi.nlm.nih.gov/11493001
https://pubmed.ncbi.nlm.nih.gov/11493001
Publikováno v:
Applied Physics Letters. 60:1839-1841
A compositionally graded InGaP alloy layer grown on a Si‐doped InP layer was used to enhance the Schottky barrier height of InP. The fabricated diodes were characterized by Auger depth profiling, variable temperature I‐V, capacitance‐voltage (C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cbceb5d2fb61b8566bf1ac22c375965
https://doi.org/10.1063/1.107181
https://doi.org/10.1063/1.107181
Publikováno v:
Journal of mass spectrometry : JMS. 35(7)
The effect of gas-phase proton transfer reactions on the mass spectral response of solvents and analytes with known gas-phase proton affinities was evaluated. Methanol, ethanol, propanol and water mixtures were employed to probe the effect of gas-pha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::132265b7a57b91175941bd4e878a42a0
https://pubmed.ncbi.nlm.nih.gov/10934432
https://pubmed.ncbi.nlm.nih.gov/10934432
Publikováno v:
Applied Physics Letters. 59:458-460
Si delta‐doped GaAs field‐effect transistors (FETs) are demonstrated by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and characterized by Hall‐effect, capacitance‐voltage (C‐V), and Shubnikov de‐Haas measurements. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bba074c46b37ad72e768aba60f6348f
https://doi.org/10.1063/1.105435
https://doi.org/10.1063/1.105435