Zobrazeno 1 - 4
of 4
pro vyhledávání: '"G R Wolstenholme"'
Publikováno v:
Proceedings of the 1988 Bipolar Circuits and Technology Meeting.
A method for measuring the emitter resistance of polysilicon emitter transistors is described that separates the interface and metal/polysilicon contact components of the emitter resistance. Results show that for devices with a continuous interfacial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a7a6cc1fa9cfd4a01449f8605c4c6cc
https://doi.org/10.1109/bipol.1988.51044
https://doi.org/10.1109/bipol.1988.51044
Publikováno v:
Solid State Communications. 50:1057-1061
Data are reported on the production of the 969 meV absorption line as functions of the carbon concentration and radiation dose in FZ and CZ silicon. With increasing dose of 2 MeV electrons the absorption first increases and then decreases. Simple equ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbf77995bc97d6c3c8571edaa3d2381e
https://doi.org/10.1016/0038-1098(84)90287-4
https://doi.org/10.1016/0038-1098(84)90287-4
Publikováno v:
Journal of Applied Physics. 61:225-233
A comparison is made between the results of high‐resolution electron microscope observations and the electrical characteristics of polycrystalline silicon emitter bipolar transistors. Devices are fabricated with and without a deliberately grown int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345bec358c0126876f1c2634c4fa4a8f
https://doi.org/10.1063/1.338861
https://doi.org/10.1063/1.338861
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