Zobrazeno 1 - 10
of 317
pro vyhledávání: '"G Pensl"'
Micropipes are hollow-core dislocations aligned along the growth direction of sublimation grown SiC ingots. We found micropipes nucleated in the interface region between the seed crystal and the grown ingot adjacent to stacking fault clusters on tilt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f1db2de8efc50ed6cded6e826c80a61
https://doi.org/10.1201/9781315140810-67
https://doi.org/10.1201/9781315140810-67
Autor:
M. Krieger, S. Beljakowa, L. Trapaidze, T. Frank, H. B. Weber, G. Pensl, N. Hatta, M. Abe, H. Nagasawa, A. Schöner
Publikováno v:
Silicon Carbide. :363-374
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e375dd62a2db180a4f8ee936ebc98d71
https://doi.org/10.1002/9783527629053.ch14
https://doi.org/10.1002/9783527629053.ch14
Autor:
M. Mai, J. Bundesmann, Krishnan Baskar, Joachim Würfl, Günther Tränkle, Richard Lossy, A. Denker, F. Lenk, Frank Brunner, L. Wang, G. Pensl, J. Schmidt, G. Sonia, Eberhard Richter, Markus Weyers, Ute Zeimer
Publikováno v:
Solid-State Electronics. 52:1011-1017
AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 10 9 cm −2 to 1 × 10 13 cm −2 . DC, pulsed I – V characteristics, loadpull and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e022b47ffd8b05b6fee10555bbbbcfd6
https://doi.org/10.1016/j.sse.2008.02.005
https://doi.org/10.1016/j.sse.2008.02.005
Autor:
Günther Tränkle, Jaochim Würfl, M. Mai, Richard Lossy, J. Opitz-Coutureau, Frank Brunner, Baskar Krishnan, Ute Zeimer, F. Lenk, A. Denker, Markus Weyers, Sonia Gnanapragasam, Eberhard Richter, Jens Schmidt, G. Pensl, Liun Wang
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:64-67
AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1 × 107 to 1 × 1013 cm−2. Hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5511af4a12d258774e41bdfe92a77327
https://doi.org/10.1007/s10854-008-9589-1
https://doi.org/10.1007/s10854-008-9589-1
Autor:
Günther Tränkle, Martin Herms, J. Opitz-Coutureau, Frank Brunner, Thomas Behm, Markus Weyers, Eberhard Richter, G. Pensl, Gnanapragasam Sonia, Gert Irmer, A. Denker, Ute Zeimer
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:68-72
The strain state of (0001) GaN layers grown on 4H-SiC by Metal Organic Vapour Phase Epitaxy (MOV- PE) and its change upon ion irradiation was studied by Raman microscopy (RM) and X-ray diffraction (XRD). The layers were irradiated with light (H, C, O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f4dc5b7c8e6cd7e594894a5fe7ed1d
https://doi.org/10.1007/s10854-007-9540-x
https://doi.org/10.1007/s10854-007-9540-x
Autor:
A. Denker, G. Sonia, Günther Tränkle, Richard Lossy, L. Wang, G. Pensl, Joachim Würfl, Markus Weyers, J. Opitz-Coutureau, Ute Zeimer, Frank Brunner, Eberhard Richter, J. Schmidt, M. Mai
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3661-3666
Operation of AlGaN/GaN HFETs in space was simulated by irradiation with protons and heavy ions at 68 MeV and 2MeV and fluences up to 1013 cm-2. Before and after irradiation dc and pulsed I-V characteristics of the AlGaN HFET devices were measured. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e354a0ca9033f1db59089858e1867036
https://doi.org/10.1109/tns.2006.885006
https://doi.org/10.1109/tns.2006.885006
Autor:
M. Mai, I. Brauer, Markus Weyers, Günther Tränkle, Richard Lossy, J. Opitz-Coutureau, J. Schmidt, Eberhard Richter, G. Pensl, A. Denker, G. Sonia, Horst P. Strunk
Publikováno v:
physica status solidi c. 3:2338-2341
AlGaN/GaN heterojunction field effect transistors (HFETs) have been irradiated with protons at 68 MeV and 2 MeV with fluences up to 1013 cm–2 in order to simulate operation in space. Hall effect measurements, dc characteristics and RF load pull mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96ba38e623674e0f5534df7b8fb1676a
https://doi.org/10.1002/pssc.200565304
https://doi.org/10.1002/pssc.200565304
The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 p
Autor:
V. P. Kuznetsov, C.A.J. Ammerlaan, A.V. Antonov, V. B. Shmagin, E. A. Uskova, Z. F. Krasilnik, G. Pensl, O. A. Kuznetsov, Boris A. Andreev
Publikováno v:
Fizika i tehnika poluprovodnikov, 36, 178-182. Lzdatel'stvo Nauka
Electrically active centers in light-emitting Si:Er layers grown by sublimation molecular-beam epitaxy (SMBE) on single-crystal Si substrates have been investigated by admittance spectroscopy with temperature scanning and by DLTS. The total density o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a47ba590eee9247f01cdff4fbccb2286
https://doi.org/10.1134/1.1453432
https://doi.org/10.1134/1.1453432
Autor:
E. N. Morozova, Z. F. Krasilnik, D. I. Kryzhkov, Boris A. Andreev, V. B. Shmagin, V. P. Kuznetsov, C.A.J. Ammerlaan, G. Pensl, E. A. Uskova
Publikováno v:
Physica B-Condensed Matter, 308, 361-364. Elsevier
The electrically active centers in light-emitting Si : Er/Si structures grown by an original sublimation MBE (SMBE) method are investigated using admittance spectroscopy and deep level transient spectroscopy. It is shown that free carrier concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f6fb66730fcab91020dea48a023f0c3
https://hdl.handle.net/11245/1.190529
https://hdl.handle.net/11245/1.190529