Zobrazeno 1 - 7
of 7
pro vyhledávání: '"G P Patsis"'
Publikováno v:
Procedia Engineering. 25:447-450
Continuum hydrodynamics accurately describes the flow of fluids over a wide range of systems. However, continuum models are unable to adequately describe the flow of fluid under extreme confinement. In particular, the no-slip boundary condition invok
Publikováno v:
Procedia Engineering. 5:1328-1331
Both the simulation and the experimental evaluation of a thermal microfluidic flow sensor are presented in this work. The sensor was evaluated in the calorimetric principle of operation with water as the test liquid. The simulation of the sensor oper
Autor:
G P Patsis, N Glezos
Publikováno v:
Journal of Physics: Conference Series. 10:385-388
Extreme-ultraviolet-(EUV) mask fabrication using electron-beam lithography has to eliminate the proximity effect defects, for the accurate representation of the patterned features. One special characteristic of EUV masks is that they contain a multil
Autor:
G. P. Patsis
Publikováno v:
physica status solidi (a). 205:2541-2543
Gate length variability due to intra or inter die variations can lead to considerable mismatch between devices even inside the same chip. This variability has to be considered in detail and new device models should be developed, aiming in modelling i
Autor:
G. P. Patsis, P. Oikonomou, E. Valamontes, A. Botsialas, I. Raptis, Merope Sanopoulou, D. Goustouridis
Publikováno v:
Proceedings IMCS 2012.
Autor:
G. P. Patsis, Evangelos Valamontes, N. A. Pantazis, Ioannis Raptis, Merope Sanopoulou, D. Goustouridis
Publikováno v:
2011 Fifth International Conference on Sensing Technology.
Capacitive-type gas sensors rely on changes in the dielectric properties of the sensing polymeric layer due to absorption of Volatile Organic Compounds (VOCs) or moisture. They are promising devices in terms of ease and low cost of fabrication, rever
Publikováno v:
International Journal of Computational Science and Engineering. 2:134
Sub-100 nm device fabrication rules require extremely tight control of Line-Edge Roughness (LER) of patterned structures. During lithographic processes the resist film introduces an initial LER due to its chemical structure and processing. This initi