Zobrazeno 1 - 10
of 24
pro vyhledávání: '"G O Andrushchak"'
Autor:
Pavlo D. Maryanchuk, Taras T. Kovaliuk, G O Andrushchak, M. N. Solovan, Viktor V. Brus, A. I. Mostovyi
Publikováno v:
Semiconductors. 52:236-241
Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0249e0d2c47d7d121948cc58c3ae2ff
https://doi.org/10.1134/s1063782618020185
https://doi.org/10.1134/s1063782618020185
Autor:
I G Orletskyi, Viktor V. Brus, G O Andrushchak, I.S. Babichuk, G P Parkhomenko, M. M. Solovan, A. I. Mostovyi, M. I. Ilashchuk, Nora Schopp, Pavlo D. Maryanchuk
Publikováno v:
Nanotechnology. 32:109601
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b53eeeda64e3699b4672d78b18575ef1
https://doi.org/10.1088/1361-6528/abce55
https://doi.org/10.1088/1361-6528/abce55
Autor:
Viktor V. Brus, G O Andrushchak, M. I. Ilashchuk, Pavlo D. Maryanchuk, I G Orletskyi, I.S. Babichuk, G P Parkhomenko, A. I. Mostovyi, Nora Schopp, Mykhailo M. Solovan
Publikováno v:
Nanotechnology. 31:505706
Nano-crystalline and amorphous films of graphitized carbon were deposited by electron-beam evaporation of bulk graphite. Structural properties and the size of graphite nanoclusters (L ≈ 1.2–5 nm) in the films were determined from the analysis of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f179ad68f908d2bcaa425ec6bf18464
https://doi.org/10.1088/1361-6528/abb5d4
https://doi.org/10.1088/1361-6528/abb5d4
Autor:
P. D. Maryanchuk, G. O. Andrushchak
Publikováno v:
Journal of Nano- and Electronic Physics. 12:06032-1
В роботі проведено дослідження оптичних властивостей кристалів Hg1 – xMnxS, Hg1 – x – уMnxFеуS, Hg1 – x – уMnxFеуSe1 – zSz. Напівмагнітні напівпровідн
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a5e5b2b866a9367e7231610c094f7dd
https://doi.org/10.21272/jnep.12(6).06032
https://doi.org/10.21272/jnep.12(6).06032
Autor:
G O Andrushchak, Pavlo D. Maryanchuk, M. I. Ilashchuk, Eduard V. Maistruk, I G Orletskyi, M. M. Solovan
Publikováno v:
Materials Research Express. 6:086219
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eec51133c7d477d23037456d53db6b1b
https://doi.org/10.1088/2053-1591/ab26f3
https://doi.org/10.1088/2053-1591/ab26f3
Autor:
P. D. Maryanchuk, G. O. Andrushchak
Publikováno v:
Sensor Electronics and Microsystem Technologies. 7:61-63
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ef470d0694a487b6392c3e464630458
https://doi.org/10.18524/1815-7459.2010.2.114248
https://doi.org/10.18524/1815-7459.2010.2.114248
Autor:
G. O. Andrushchak, P. D. Mar’anchuk
Publikováno v:
Russian Physics Journal. 51:285-290
The magnetic susceptibility χ of Hg1−xMnxS is investigated at temperatures T = 77–300 K for H = 4 kOe by the Faraday method before and after thermal treatment of the sample in compound vapors. The special features of χ are found to be caused by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e743218dc7269a2b082717c8363900d
https://doi.org/10.1007/s11182-008-9050-1
https://doi.org/10.1007/s11182-008-9050-1
Autor:
G. O. Andrushchak, P. D. Maryanchuk
Publikováno v:
Journal of Physical Studies. 12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::052b8ffafba4fe428c0d9c9dddcfcabc
https://doi.org/10.30970/jps.12.3706
https://doi.org/10.30970/jps.12.3706
Publikováno v:
Materials Research Express; Aug2019, Vol. 6 Issue 8, p1-1, 1p
Autor:
ORLETSKYI, I. G.1, ILASHCHUK, M. I.1, MAISTRUK, E. V.1, KOZIARSKYI, I. P.1 i.koziarskyi@chnu.edu.ua, KOZIARSKYI, D. P.1
Publikováno v:
Acta Physica Polonica: A. Nov2022, Vol. 142 Issue 5, p615-620. 6p.