Výsledky vyhledávání - "G N Nazarova"

Small-signal optimization approach to design of microwave signal switch ICs on MOS transistors

Autor: G. N. Nazarova, N. A. Usachev, V. V. Elesin, G. V. Chukov

Publikováno v: Russian Microelectronics. 46:365-369

This paper presents a technique for optimizing small-signal parameters of monolithic microwave signal switches on MOS transistors. The technique is based on analytical expressions and visual plots that allow us to determine the topological sizes of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::122df9db29a2a5dc081a053938243ee7
https://doi.org/10.1134/s106373971705002x

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Design and Test Issues of a SOl CMOS Voltage Controlled Oscillators for Radiation Tolerant Frequency Synthesizers

Autor: D. I. Sotskov, K. M. Amburkin, N. A. Usachev, Alexander Y. Nikiforov, V. V. Elesin, Dmitry M. Amburkin, G. N. Nazarova, G. V. Chukov

Publikováno v: EWDTS

Design and test issues of RF voltage controlled oscillators (VCOs) for space applications are presented. The proposed approach was demonstrated during the design and testing of the differential cross-coupled inductance-capacitance (DCC-LC) VCOs imple

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50ebf276cdd2289570837688687ddd37
https://doi.org/10.1109/ewdts.2018.8524835

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System design considerations of universal UHF RFID reader transceiver ICS

Autor: Alexander Y. Nikiforov, Vladislav Dmitriev, Nikolay Shelepin, D. I. Sotskov, V. V. Elesin, N. A. Usachev, G. V. Chukov, G. N. Nazarova

Publikováno v: Facta universitatis - series: Electronics and Energetics. 28:297-307

This paper describes the architecture, system analysis and implementation of world-wide regulation compliant UHF RFID reader transceiver for ISO 18000-6 multi-class tags in the ISM band 860 MHz-960 MHz. The presented considerations are based on a sys

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3dc177bcdcc2714538ff30df7131c59a
https://doi.org/10.2298/fuee1502297u

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Design and testing issues of a high-speed SOI CMOS dual-modulus prescaler for radiation tolerant frequency synthesizers

Autor: N. A. Usachev, K. M. Amburkin, D. I. Sotskov, G. N. Nazarova, V. V. Elesin, A. Y. Nikiforov

Publikováno v: 2017 IEEE 30th International Conference on Microelectronics (MIEL).

Design and testing issues of RF frequency divider (prescaler) for space application are presented. The proposed approaches were validated during the design and testing of the high-speed divide-by-16/18 dual-modulus prescaler implemented in 180 nm SOI

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42e2f5b9ff32e88a0322ba9ece46b157
https://doi.org/10.1109/miel.2017.8190132

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Investigation of the possibility to develop radiation-hardness LSIs for navigational purposes according to the 0.35-μm domestic CMOS SOI technology

Autor: G. N. Nazarova, A. A. Titarenko, Yu. A. Kabal’nov, V. V. Elesin, G. V. Chukov

Publikováno v: Russian Microelectronics. 41:266-277

The results of the computational-experimental investigations of high-frequency and noise properties of SOI MOS transistors and passive elements of 0.35-μm domestic digital CMOS SOI technology are presented. New elements absent in the library composi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b932bddce25f5f845ebbbed0ef2fca1c
https://doi.org/10.1134/s1063739712040063

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Design of passive elements for monolithic silicon-germanium microwave ICs tolerant to ionizing radiation

Autor: G. N. Nazarova, V. V. Elesin, N. A. Usachev

Publikováno v: Russian Microelectronics. 39:134-141

Techniques for the design of passive elements for monolithic silicon-germanium microwave ICs, tolerant to ionizing radiation have been developed with regard to specific features of the design of microwave passive elements on conducting silicon substr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8c99ed4b86984e7e1f9dc0a5e12dc0a
https://doi.org/10.1134/s1063739710020083

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Total Ionizing Dose Effects in Phase-Locked Loop ICs and Frequency Synthesizers

Autor: N. A. Usachev, Vitally A. Telets, G. V. Chukov, V. V. Elesin, A. G. Kuznetsov, D. I. Sotskov, G. N. Nazarova, Dmitry V. Boychenko

Publikováno v: 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

This paper presents a brief overview of total ionizing dose effects for a variety of PLL ICs and PLL-based frequency synthesizer implemented in commercial bulk CMOS, silicon-on-insulator CMOS, BiCMOS and SiGe BiCMOS technology processes with frequenc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::efc974f3ff7a0a760d4a161d59337bdf
https://doi.org/10.1109/radecs.2015.7365690

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Long-Term Transient Radiation Effects in SOI CMOS RF ICs

Autor: V. V. Elesin, G. V. Chukov, Alexander Y. Nikiforov, Dmitry M. Amburkin, G. N. Nazarova

Publikováno v: 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

This paper presents the study of transient radiation effects in SOI CMOS RF IC's and discrete MOS transistors. Experiments show that the sensitivity of SOI RF IC's (gain blocks, mixers, VCO etc.) to transient irradiations (dose rate) is mainly determ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::178bf4b5e5ff8bb8a997870133aae962
https://doi.org/10.1109/radecs.2015.7365628

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