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The vanadium oxide systems is very complex. In fact, a wide range of ordered and disordered structures can arise because of the multivalent vanadium ion.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::a164720f69f1cb1c5b02ea7ba51c4d7b
https://hdl.handle.net/11587/429278
https://hdl.handle.net/11587/429278
Publikováno v:
Materials Research Bulletin. 48:1741-1744
β-Ga 2 O 3 nanowires were grown by thermal oxidation of GaSe single crystal surface under a mixture of argon–air flow, without the presence of a catalyst or foreign substrate. The nanowires were obtained after annealing GaSe surface at different t
Publikováno v:
Applied Surface Science. 265:329-333
The current work demonstrates the first reported successful synthesis of unique alpha-TeO2 hybrid microstructures through thermal oxidation of Te microtubes in a horizontal tube furnace at different temperatures in the range 220-470 degrees C, under
Publikováno v:
Thin Solid Films. 520:2455-2460
In2O3 thin films were prepared by the thermal oxidation of amorphous InSe films in air atmosphere. The structure, morphology and composition of the thermal annealed products were characterized by X-ray diffraction (XRD), scanning electron microscopy
Publikováno v:
Journal of Crystal Growth. 336:101-105
Long α-TeO2 microwires were synthesized in high yield on quartz substrate by vapor transport process, using Te powder as the source material and oxygen (O2) as a carrier gas. Scanning electron microscope (SEM), X-Ray diffraction (XRD), transmission
Publikováno v:
Crystal Growth & Design. 11:1924-1929
In2O3 microrods were grown by thermal oxidation of InSe single crystal under a mixture of argon−oxygen flow without the presence of a catalyst. Microrods were obtained at the temperature of about 640 °C after a thermal treatment of 180 min. The mo
Publikováno v:
Crystal Research and Technology. 46:765-768
Te microtubes with hexagonal cross sections were deposited on quartz substrates by thermal evaporation method of Te metal in an inert atmosphere without the presence of any catalyst. Tellurium was evaporated by heating at 600 °C and the Te gas was c
Publikováno v:
Journal of Materials Science: Materials in Electronics. 22:649-653
Indium monoselenide (InSe) nanowires were grown by the thermal evaporation method in argon atmosphere without the presence of any catalysts using InSe polycrystalline powder as the source material. No nanostructure growth was observed at deposition t
Publikováno v:
Vacuum. 84:935-939
TeO 2 thin films were deposited on quartz substrates by rf reactive sputtering technique from a Te metal target. The obtained samples were annealed in an argon atmosphere at 450 °C for different annealing times up to 90 min. X-ray diffraction studie
Publikováno v:
Sensors and Actuators B: Chemical. 142:185-190
Tellurium tubular crystals were grown by direct thermal evaporation of tellurium metal in an inert atmosphere on quartz substrates at ambient pressure without employing any catalyst. Tellurium powder was evaporated by heating at 600 degrees C and was