Zobrazeno 1 - 10
of 52
pro vyhledávání: '"G M Foster"'
Autor:
K. Gleave, A. Guy, F. Mechan, M. Emery, A. Murphy, V. Voloshin, C. E. Towers, D. Towers, H. Ranson, G. M. Foster, P. J. McCall
BackgroundThe success of Insecticide Treated Bednets (ITNs) for malaria vector control in Africa relies on the behaviour of the major malaria vectors, Anopheles species. Research into mosquito behavioural traits influencing the performance of ITNs ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc3d39faa6d385da80cef85fdf25dea
https://doi.org/10.1101/2022.07.20.500766
https://doi.org/10.1101/2022.07.20.500766
Autor:
G. M. Foster, Andrew D. Koehler, James C. Gallagher, Jennifer K. Hite, Mona A. Ebrish, Brendan P. Gunning, Travis J. Anderson, Karl D. Hobart, Michael A. Mastro, Robert Kaplar, Francis J. Kub
Publikováno v:
Journal of Electronic Materials. 50:3013-3021
Present GaN technology consists primarily of heteroepitaxial, lateral high electron mobility transistors; however, high-power devices would be much more efficiently manufactured with a vertical geometry due to better blocking voltage scaling. This te
Autor:
James C. Gallagher, Travis J. Anderson, Mona A. Ebrish, Robert Kaplar, Karl D. Hobart, Brendan P. Gunning, G. M. Foster, Andrew D. Koehler
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 33:546-551
GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the subst
Autor:
Charles R. Eddy, Neeraj Nepal, Luke O. Nyakiti, Syed B. Qadri, David J. Meyer, Scott G. Walton, G. M. Foster, Andrew D. Koehler, Virginia D. Wheeler, Andrew C. Lang, David R. Boris
Publikováno v:
Chemistry of Materials. 32:1140-1152
Ga2O3 has emerged as a promising material for next-generation power electronics. Beyond the most stable and studied β phase, metastable α-, e-, and κ-Ga2O3 have unique characteristics such as large...
Autor:
James C. Gallagher, Michael A. Mastro, Boris N. Feigelson, Travis J. Anderson, G. M. Foster, Andrew D. Koehler, Alan G. Jacobs, Jennifer K. Hite, Karl D. Hobart, Francis J. Kub
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:478-482
We report selective area n-type doping using ion implantation of Si into semi-insulating, C-doped GaN samples activated using both conventional rapid thermal annealing (RTA) and 30 atm N2 overpressure annealing. Implanted regions were tested for Si a
Autor:
J. Perkins, G. M. Foster, M. Myer, S. Mehra, J. M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl, L. J. Brillson
Publikováno v:
APL Materials, Vol 3, Iss 6, Pp 062801-062801-6 (2015)
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar M
Externí odkaz:
https://doaj.org/article/97fe6be286894d03a0edefcf0fabb5d1
Autor:
G. M. Foster, Andrew D. Koehler, John L. Lyons, Jaime A. Freitas, Marko J. Tadjer, Neeraj Nepal
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3187-Q3194
Autor:
Michael A. Mastro, Cem Basceri, Francis J. Kub, Ozgur Aktas, Karl D. Hobart, Vladimir Odnoblyudov, G. M. Foster, Andrew D. Koehler, Travis J. Anderson, Lunet E. Luna, Marko J. Tadjer
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q226-Q229
Autor:
Brian Novak, Karl D. Hobart, Kevin Frey, Tatyana I. Feygelson, Virginia D. Wheeler, Robert S. Howell, G. M. Foster, Andrew D. Koehler, Patrick B. Shea, James C. Gallagher, Josephine B. Chang, Shamima Afroz, Ken Nagamatsu, Marko J. Tadjer
Publikováno v:
BCICTS
The Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES) device is being developed to enable a 2x increase in breakdown voltage of a Super-Lattice Castellated Field Effect Transistor (SLCFET) device. Incorporation of a diamond s
Autor:
G. M. Foster, Leonard J. Brillson, David C. Look, Buguo Wang, Alexander Jarjour, Hantian Gao, Martin W. Allen, A. Hyland, William Ruane, Marius Grundmann, H. von Wenckstern, Jon W. Cox
Publikováno v:
Journal of Electronic Materials. 47:4980-4986
Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new tec