Zobrazeno 1 - 5 of 5 pro vyhledávání: '"G M Bates"'
2
(SiC) x (AlN) 1-x solid-solution grown by physical vapor transport (PVT) method
Autor: David J. Knuteson, Jerry W. Hedrick, S. McLaughlin, Matthew R. King, Narsingh B. Singh, D. Kahler, G. M. Bates, B. Wagner, Andre Berghmans
Publikováno v: Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications III.
(SiC) x (AlN) 1-x Solid-solution films were deposited on on-axis Si-face 4H-SiC (0001) substrates by the physical vapor transport (PVT) method. Attempts were made to dope this film with Nd +3 for high power laser applications. SiC or its alloys will
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0dbcda9ff30b12c98630f1bf740aab3c
https://doi.org/10.1117/12.827260
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3
Comparison of giant multipole resonances of multipolarityE1toE4inNi58(T0=1)andNi60(T0=2)with inelastic electron scattering
Autor: S. J. Kowalick, R. Pitthan, J. S. Beachy, E.B. Dally, F.R. Buskirk, D. H. Dubois, G. M. Bates, J.N. Dyer
Publikováno v: Physical Review C. 21:147-166
The cross section for electron scattering from the isotopes $^{58}\mathrm{Ni}$ and $^{60}\mathrm{Ni}$ has been measured with electrons of 102 MeV at scattering angles of 45, 60, 75, 90, and 105\ifmmode^\circ\else\textdegree\fi{} between 3 and 50 MeV
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85b297d22623ab4178fa3c05567f304c
https://doi.org/10.1103/physrevc.21.147
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Plný text Recenzováno Digitální knihovna AV ČR
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