Zobrazeno 1 - 10
of 16
pro vyhledávání: '"G M, Laws"'
Autor:
Nongjian Tao, H. Q. Zhang, Jinman Yang, Trevor Thornton, Devens Gust, Bharath R. Takulapalli, Stuart Lindsay, Brian Ashcroft, G. M. Laws
Publikováno v:
physica status solidi (b). 241:2291-2296
The threshold voltage characteristics of a buried channel silicon-on-insulator MOSFET is examined in solutions of varying acidity. Experiments utilizing an integrated micro-fluidic channel exhibit a variation in threshold voltage that appears approxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9898895f44e09c78956d054d7e065176
https://doi.org/10.1002/pssb.200404936
https://doi.org/10.1002/pssb.200404936
Autor:
J. M. Tang, Seth J. Wilk, Robert S. Eisenberg, Marco Saraniti, Michael Goryll, G. M. Laws, Stephen M. Goodnick, Trevor Thornton
Publikováno v:
Superlattices and Microstructures. 34:451-457
In this paper we present a method to fabricate an aperture in a silicon wafer that can be used to suspend a freestanding lipid bilayer membrane. The design offers the feature of scalability of the aperture size into the submicron range. Lipid bilayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604e2d82a92d397d0e81ea0425bdd85e
https://doi.org/10.1016/j.spmi.2004.03.041
https://doi.org/10.1016/j.spmi.2004.03.041
Autor:
Linda de la Garza, Trevor Thornton, Devens Gust, Michael N. Kozicki, G. M. Laws, J. Gu, D. Sorid, Jinman Yang
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 17:659-663
We have developed a hybrid molecular/MOSFET, which is sensitive to the presence of a molecular layer attached to its surface. The application of the molecular layer was investigated by observing changes in the threshold current of the device. A signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1526a5fedcbaeb213a3539d96c3b08
https://doi.org/10.1016/s1386-9477(02)00923-2
https://doi.org/10.1016/s1386-9477(02)00923-2
Publikováno v:
physica status solidi (b). 233:83-89
We have developed a hybrid molecular/MOSFET, which is sensitive to the presence of a molecular layer attached to its surface. The application of the molecular layer was investigated by observing changes in the drain current as a function of substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e55e4f8fa90e3bb5039a8ffc7e3c944
https://doi.org/10.1002/1521-3951(200209)233:1<83::aid-pssb83>3.0.co
https://doi.org/10.1002/1521-3951(200209)233:1<83::aid-pssb83>3.0.co
Publikováno v:
Journal of Applied Physics. 89:1108-1115
A detailed understanding of the nitride refractive indices is essential for the modeling and design of III–N laser structures. In this article, we report on the assessment of the refractive index data available for the nitride alloys and present fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa2e12d6ba2e6a3b95d20dd322af952
https://doi.org/10.1063/1.1320007
https://doi.org/10.1063/1.1320007
Autor:
Ian Harrison, Eric C. Larkins, C. T. Foxon, N. I. Katsavets, Trevor M. Benson, G. M. Laws, Tin S. Cheng
Publikováno v:
Semiconductors. 32:1048-1053
A detailed study of the effect of rapid thermal annealing in a N2 or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::521fc6154fc1d263583dffbbc68550b8
https://doi.org/10.1134/1.1187579
https://doi.org/10.1134/1.1187579
Autor:
R. Grover, Dror Sarid, Bharath R. Takulapalli, Yanming Zhao, G. M. Laws, Trevor Thornton, B. Mc Carthy, Ghassan E. Jabbour, Devens Gust
Publikováno v:
Applied Physics Letters. 85:3926-3928
We report on the use of Kelvin probe force microscopy in measuring the shift of the contact potential difference of micron-scale areas. The experimental results provide important information required for understanding and modeling the electrical char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::949177ac9e1ce8550c31768e5cc9beed
https://doi.org/10.1063/1.1810209
https://doi.org/10.1063/1.1810209
Autor:
J.W. Orton, G B Ren, J. Morgan, T. S. Chengt, S E Hoopert, C. T. Foxont, Eric C. Larkins, Ian Harrison, G. M. Laws
Publikováno v:
MRS Proceedings. 482
We report on the fabrication and characterisation gallium nitride light emitting diodes (LEDs) grown by molecular beam epitaxy on (0001) oriented sapphire and (111)B GaAs substrates. The current voltage characteristics of the devices grown on sapphir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89763d0754ba8ee6ba125dd733798fec
https://doi.org/10.1557/proc-482-1113
https://doi.org/10.1557/proc-482-1113
Publikováno v:
Environmental and molecular mutagenesis. 28(4)
Big Blue (BB) and generic B6C3F1 mice were given one to three i.p. injections of 50 mg/kg benzo[a]pyrene (B[a]P) in DMSO every other day to achieve cumulative doses of 50 to 150 mg/kg. Three weeks after treatment, the mutation frequency at the endoge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::779b05a598ba718acc9f1ab8b445e42c
https://pubmed.ncbi.nlm.nih.gov/8991066
https://pubmed.ncbi.nlm.nih.gov/8991066
Autor:
B. Bunday, S. Myhajlenko, M. Pratt, J. A. Allgair, P. Boland, G. M. Laws, A. Handugan, H. Wang, T. Eschrich, S. Milicic
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:102
The authors report on the realization of an enhanced process protocol for producing sub-20nm wide lines with extremely narrow pitches in electron beam resist using a low temperature development process. Linewidths ranging from 10to50nm with a pitch r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f0c3e4ea864d06f96e90a2e19fb15f
https://doi.org/10.1116/1.2426976
https://doi.org/10.1116/1.2426976