Zobrazeno 1 - 10
of 211
pro vyhledávání: '"G L Luo"'
Autor:
M.-S. Yeh, G.-L. Luo, F.-J. Hou, P.-J. Sung, C. J. Wang, C.-J. Su, C.-T. WU, Y.-C. Huang, T.-C. Hong, B.-Y. Chen, K.-M. Chen, Y.-C. WU, M. Izawa, M. Miura, M. Morimoto, H. Ishimura, Y.-J. Lee, W.-F. Wu, W.-K. Yeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1227-1232 (2018)
Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments. In-situ digital O3 treatment in ALD chamber was adopted on the surface of Ge fin sidewall in
Externí odkaz:
https://doaj.org/article/a5f5f525abe24ceda9f3e6d0178335bc
Autor:
X.-R. Yu, M.-H. Chuang, S.-W. Chang, W.-H. Chang, T.-C. Hong, C.-H. Chiang, W.-H. Lu, C.-Y. Yang, W.-J. Chen, J.-H. Lin, P.-H. Wu, T.-C. Sun, S. Kola, Y.-S. Yang, Yun Da, P.-J. Sung, C.-T. Wu, T.-C. Cho, G.-L. Luo, K.-H. Kao, M.-H. Chiang, W. C.-Y. Ma, C.-J. Su, T.-S. Chao, T. Maeda, S. Samukawa, Y. Li, Y.-J. Lee, W.-F. Wu, J.-H. Tarng, Y.-H. Wang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b4adde0e41a225ac75a85c151335743
https://doi.org/10.1109/iedm45625.2022.10019507
https://doi.org/10.1109/iedm45625.2022.10019507
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
X.-R. Yu, W.-H Chang, T.-C. Hong, P.-J. Sung, A. Agarwal, G.-L. Luo, C.-T. Wu, K.-H. Kao, C.-J. Su, S.-W. Chang, W.-H. Lu, P.-Y. Fu, J.-H. Lin, P.-H. Wu, T.-C. Cho, W. C.-Yu. Ma, D.-D. Lu, T.-S. Chao, T. Maeda, Y.-J. Lee, W.-F. Wu, W.-K. Yeh, Y.-H. Wang
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa851f2d392062a39deed39c595221a1
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830316
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830316
The controlling of exhaust gas from gasoline is crucial for atmospheric environment protection. Research Octane Number (RON) loss and restricted sulphur (S) content matter the quality of gasoline. To obtain gasoline with high quality, the paper propo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9f79949dffb4fd9a1224a4c7fa8b1ed
https://doi.org/10.3233/atde210342
https://doi.org/10.3233/atde210342
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
J Anim Sci
The maintenance requirements of net energy and net protein were assumed to represent the most accurate and important values totally for the animal’s utilization. The objective of this experiment was to determine the net energy and net protein requi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9e520db4d286d3a5014a6082619ecfa
https://doi.org/10.1093/jas/skz253
https://doi.org/10.1093/jas/skz253
Autor:
E-Ray Hsieh, J. L. Lin, Ming-Daou Lee, J. K. Chang, G. L. Luo, Osbert Cheng, K. S. Li, Steve S. Chung, C. K. Chiang, H. Pai
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
A new improvement of FinFET has been demonstrated in the extension of the Moore’s Law toward N3 technology and beyond. Instead of conventional STI, the approach is to use air-trench-isolation (ATI) between fins such that, in the width direction, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4d2773daebb659d45223cf355628b05
https://doi.org/10.1109/vlsi-tsa51926.2021.9440097
https://doi.org/10.1109/vlsi-tsa51926.2021.9440097
Sub-60 mV/dec Germanium Nanowire Field-Effect Transistors with 2-nm-thick Ferroelectric Hf0.5Zr0.5O2
Autor:
Yi-Wen Lin, F.-J. Hou, Y.-N. Chen, C.-J. Su, C.-T. Wu, Hsiang-Hung Chang, W.-K. Yeh, Yung-Chun Wu, W.-F. Wu, T.-Y. Yu, K.-L. Lin, G.-L. Luo
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We report an n-type Ge nanowire ferroelectric-Hf 0.5 Zr 0.5 O 2 field effect transistor (Ge NW FE-HZO FET) was experimentally demonstrated. An in-situ ALD O 3 treatment was carried out to form an atomically-thin (~0.4 nm) interfacial layer (IL) of Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d4a10acdb35248f5be73621c7d8f15e
https://doi.org/10.1109/vlsi-tsa51926.2021.9440120
https://doi.org/10.1109/vlsi-tsa51926.2021.9440120