Zobrazeno 1 - 10
of 37
pro vyhledávání: '"G Gijs Dingemans"'
Publikováno v:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 30(2):021505, 021505-1/15. AVS Science and Technology Society
The authors have been investigating the use of [Al(CH3)2(µ-OiPr)]2 (DMAI) as an alternative Al precursor to [Al(CH3)3] (TMA) for remote plasma-enhanced and thermal ALD over wide temperature ranges of 25–400 and 100–400¿°C, respectively. The gr
Publikováno v:
Journal of the Electrochemical Society, 159(3), H277-H285. Electrochemical Society, Inc.
Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and m
Autor:
AJ Arjan Flikweert, Stefan Muthmann, G Gijs Dingemans, Aad Gordijn, Matthias Meier, van de Mcm Richard Sanden
Publikováno v:
Solar Energy Materials and Solar Cells, 95(12), 3328-3332. Elsevier
Solar Energy Materials and Solar Cells, 95, 3328-3332
Solar Energy Materials and Solar Cells, 95, 3328-3332
In this work, in-situ transmission measurements using plasma as light source are presented for the determination of growth rate and crystallinity during silicon thin-film growth. The intensity of distinct plasma emission lines was measured at the bac
Autor:
Verena Mertens, Dennis Köhn, G Gijs Dingemans, Stefan Bordihn, Jörg Müller, Wilhelmus M. M. Kessels, M. M. Mandoc, Peter Engelhart, Gerd Kesser
Publikováno v:
Proceedings of the SiliconPV 2011 Conference (1st International Conference on Crystalline Silicon Photovoltaics), 17-20 April 2011, Freiburg, Germany, 654-659
STARTPAGE=654;ENDPAGE=659;TITLE=Proceedings of the SiliconPV 2011 Conference (1st International Conference on Crystalline Silicon Photovoltaics), 17-20 April 2011, Freiburg, Germany
STARTPAGE=654;ENDPAGE=659;TITLE=Proceedings of the SiliconPV 2011 Conference (1st International Conference on Crystalline Silicon Photovoltaics), 17-20 April 2011, Freiburg, Germany
In this work we present the surface passivation properties of pre-oxidized Si(100) surfaces compared to H-terminated Si(100) after atomic layer deposition (ALD) of Al2O3 thin films. Additionally the differences in surface passivation for n- and p-typ
Autor:
V Vasco Verlaan, Wmm Erwin Kessels, G Gijs Dingemans, van de Mcm Richard Sanden, van den Lrjg Elzen
Publikováno v:
Physica Status Solidi C: Conferences, 7(3-4), 976-979. Wiley-VCH Verlag
A systematic study on the composition and bonding structure of plasma-assisted ALD Al2O3 films deposited at substrate temperatures between 25 and 400 °C is presented. The composition of the films is determined with Rutherford back scattering (RBS) a
Publikováno v:
Electrochemical and Solid-State Letters, 13(3), H76-H79. Electrochemical Society, Inc.
The material properties and c-Si surface passivation have been investigated for Al 2 O 3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures (T dep ) between 25
Autor:
M.C.M. van de Sanden, SE Stephen Potts, Luc R. Van den Elzen, E Erik Langereis, W. Keuning, Wilhelmus Mathijs Marie Kessels, G Gijs Dingemans
Publikováno v:
Atomic layer deposition applications 5 : Proceedings of the 5th Symposium on Atomic Layer Deposition as part of the 216th Meeting of the Electrochemical Society 5-7 October 2009, Vienna, 233-242
STARTPAGE=233;ENDPAGE=242;TITLE=Atomic layer deposition applications 5 : Proceedings of the 5th Symposium on Atomic Layer Deposition as part of the 216th Meeting of the Electrochemical Society 5-7 October 2009, Vienna
STARTPAGE=233;ENDPAGE=242;TITLE=Atomic layer deposition applications 5 : Proceedings of the 5th Symposium on Atomic Layer Deposition as part of the 216th Meeting of the Electrochemical Society 5-7 October 2009, Vienna
Many reported ALD processes are carried out at elevated temperatures (> 100 ºC), which is problematic for temperature-sensitive substrates. Plasma-enhanced ALD routes may provide a solution, as the ALD temperature window can be extended to lower dep
Autor:
van den Mn Menno Donker, G Gijs Dingemans, R. Schmitz, Friedhelm Finger, J. Klomfass, Bernd Rech, van de Mcm Richard Sanden, Lothar Houben, Wmm Erwin Kessels
Publikováno v:
Journal of Materials Research, 22(7), 1767-1774. Materials Research Society
The effect of process parameters on the plasma deposition of μc-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition pr
Autor:
Arthur Weeber, Mwpe Lamers, G Gijs Dingemans, Ingrid G. Romijn, Hcm Harm Knoops, van de Bwh Bas Loo, Wmm Erwin Kessels, G.J.M. Janssen
Publikováno v:
Solar Energy Materials and Solar Cells, 143, 450-456. Elsevier
To achieve high conversion efficiencies, advanced silicon solar cell architectures such as interdigitated back contact solar cells demand that defects at both the n+ and p+ doped Si surfaces are passivated simultaneously by a single passivation schem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8e215ec6d2b6970aed00483eca582d1
https://research.tue.nl/nl/publications/a131d284-01db-49e4-83fd-c2defc574642
https://research.tue.nl/nl/publications/a131d284-01db-49e4-83fd-c2defc574642
Publikováno v:
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes). 9:159-171
Laser diagnostic studies of capacitively coupled rf discharges containing silane diluted in argon have received considerable attention in order to understand the dust particles' formation and behaviour. The formation mechanism of those macroscopic pa