Zobrazeno 1 - 10
of 26
pro vyhledávání: '"G G Skrotskaya"'
Autor:
G. G. Skrotskaya, V. N. Denisov, B. N. Mavrin, G. Zentai, L. Pogány, Svetlana Popova, V. I. Larchev
Publikováno v:
Journal of Non-Crystalline Solids. 135:255-258
The microstructure of bulk samples of GaSb, obtained by rapid quenching from the liquid, was investigated by scanning electron microscope (SEM) and by Raman scattering. The Raman data showed that some spots observed in the samples by SEM were Sb, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::117c66e443ea633e3f72c76eb04d234c
https://doi.org/10.1016/0022-3093(91)90428-9
https://doi.org/10.1016/0022-3093(91)90428-9
Autor:
S. V. Demishev, V. I. Larchev, G. G. Skrotskaya, A. G. Lyapin, Svetlana Popova, M. M. Aleksandrova, N. E. Sluchanko, Yu. V. Kosichkin
Publikováno v:
Journal of Non-Crystalline Solids. :1459-1462
Electrophysical properties of the bulk amorphous A 3 B 5 semiconductor a-GaSb are studied for the first time. It is shown that in amorphous-crystalline gallium antimonide system a metal-insulator transition can be induced as the content of the amorph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b46eeb534b6d6e85d401303a1a2aea5
https://doi.org/10.1016/0022-3093(87)90350-4
https://doi.org/10.1016/0022-3093(87)90350-4
Publikováno v:
physica status solidi (a). 91:K5-K8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c76a4defaae29ed93f52a47b0e147eb0
https://doi.org/10.1002/pssa.2210910141
https://doi.org/10.1002/pssa.2210910141
Publikováno v:
Physica Scripta. 39:338-340
The results of the rapid quenching from the melt of the pure metals (In, Pb) at high pressures 0.7-8.0 GPa with a cooling rate ~ 103 K s−1 are presented. The supercooling of the melt was measured, and the high pressure influence on the basic parame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0dd9586e3ae4d57eebacc217ba02a46
https://doi.org/10.1088/0031-8949/39/3/012
https://doi.org/10.1088/0031-8949/39/3/012
Autor:
V N Poluboyarov, V A Trufan, R M Savvina, G G Skrotskaya, V M Zubkov, N F Starodubtsev, I V Vasilishcheva, O N Talenskiĭ
Publikováno v:
Soviet Journal of Quantum Electronics. 13:1407-1408
Cadmium sulfide crystals with a disturbed surface layer about 5 μ thick were annealed by KrF* laser pulses of 10 nsec duration. This improved the crystal structure when the cadmium side was irradiated. The effect was not detectable on the sulfur sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ca8a8aca629eab2c72067258122bf2
https://doi.org/10.1070/qe1983v013n10abeh004932
https://doi.org/10.1070/qe1983v013n10abeh004932
Publikováno v:
Uspekhi Fizicheskih Nauk. 150:466
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::995cd0697e79b6751ca7a79634496c81
https://doi.org/10.3367/ufnr.0150.198611k.0466
https://doi.org/10.3367/ufnr.0150.198611k.0466
Autor:
Terukov, E. I.1,2 eug.terukov@mail.ioffe.ru, Babaev, A. A.3, Tkachev, A. G.4, Zhilina, D. V.3
Publikováno v:
Technical Physics. Jul2018, Vol. 63 Issue 7, p1044-1048. 5p. 2 Charts, 3 Graphs.
Autor:
Ojima, Takayuki, Adachi, Sadao
Publikováno v:
Journal of Applied Physics; 9/15/1997, Vol. 82 Issue 6, p3106, 6p, 1 Diagram, 1 Chart, 6 Graphs
Publikováno v:
Soviet Physics Uspekhi; Nov1986, Vol. 29 Issue 11, p1068-1069, 2p