Zobrazeno 1 - 10
of 63
pro vyhledávání: '"G E McGuire"'
Autor:
G. E. McGuire, M. A. Ray, Steven J. Simko, F. Keith. Perkins, Susan L. Brandow, Elizabeth A. Dobisz, R. J. Nemanich, A. R. Chourasia, D. R. Chopra
Publikováno v:
Analytical Chemistry. 65:311-333
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f7ad45be57f1c04d62dcb31a74c5155
https://doi.org/10.1021/ac00060a016
https://doi.org/10.1021/ac00060a016
Autor:
G E McGuire, R A Outlaw
Publikováno v:
2010 8th International Vacuum Electron Sources Conference and Nanocarbon.
Field emission electron sources are an excellent alternative for a myriad of applications such as flat panel displays, microwave tubes and plasma thrusters requiring highly efficient and compact electron sources with a short turn-on time, high power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e70916b734562d9a78f49fc41c3e9dfd
https://doi.org/10.1109/ivesc.2010.5644365
https://doi.org/10.1109/ivesc.2010.5644365
Autor:
J E, Fulghum, G E, McGuire, I H, Musselman, R J, Nemanich, J M, White, D R, Chopra, A R, Chourasia
Publikováno v:
Analytical chemistry. 61(12)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b3905ab668c19273feac00878cb174de
https://pubmed.ncbi.nlm.nih.gov/20593872
https://pubmed.ncbi.nlm.nih.gov/20593872
Publikováno v:
Analytical Chemistry. 63:99-118
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18010ebf39784c4aa806f84c91d2c36c
https://doi.org/10.1021/ac00012a007
https://doi.org/10.1021/ac00012a007
Autor:
G. E. McGuire, D. Temple
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e728110d172455a6318a8c29a0c693
https://doi.org/10.1063/1.51123
https://doi.org/10.1063/1.51123
Publikováno v:
Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices ISBN: 9789401047579
Using sequentially deposited Ti-Co metal bilayers on Si, for which Ti was deposited first, we have obtained epitaxial CoSi2 single crystal films on (001) Si substrates after rapid thermal annealing (RTA). The CoSi2 film resistivity, thermal stability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2576c0deac5033859ecd0388493b28b0
https://doi.org/10.1007/978-94-011-1727-2_27
https://doi.org/10.1007/978-94-011-1727-2_27
Publikováno v:
MRS Proceedings. 280
The mechanism of formation of epitaxial CoSi2 film on (001) Si substrate, produced using sequentially deposited Ti-Co bimetallic layer source materials for which Ti was deposited onto the Si substrates first, has been studied by observing the Co sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a338d2a66df47ab7522f92496ba358
https://doi.org/10.1557/proc-280-603
https://doi.org/10.1557/proc-280-603
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:78
It is important in microelectronics to be able to measure damage and monitor processing during or following the many different processes. To this end, a simple and universal technique is desirable. In this article, differential reflectance (DR) is ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab4e7fa9cb953da76ae657d9baacd57
https://doi.org/10.1116/1.586687
https://doi.org/10.1116/1.586687
Autor:
M. Denker, M. Ray, M. Li, G. E. McGuire, J. W. Andrews, Y. Z. Hu, Eugene A. Irene, K. A. Conrad
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1111
Hydrogen‐bombardment induced damage in single crystal silicon as a function of the substrate temperature, ion energy, and ion dose was studied using in situ spectroscopic ellipsometry over the photon energy range 2.0–5.5 eV under high vacuum cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96c48c95e0007ede55fb91725c100946
https://doi.org/10.1116/1.586086
https://doi.org/10.1116/1.586086
Autor:
S. Chongsawangvirod, J. W. Andrews, T. M. Burns, Eugene A. Irene, S. Chevacharoeukul, G. E. McGuire
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:41
Differential reflectance (DR) spectroscopy has recently been reported to be effective in measuring the damage imparted to a Si surface by ion beams. Spectroscopic ellipsometry (SE) has been used extensively for this measurement. The present study com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1bc65379462b8a6f4530211bef40ebd
https://doi.org/10.1116/1.585788
https://doi.org/10.1116/1.585788