Zobrazeno 1 - 10
of 61
pro vyhledávání: '"G E Frank-Kamenetskaya"'
Autor:
G. N. Iluridze, Stefan Ivanov, G. V. Benemanskaya, G. E. Frank-Kamenetskaya, Dmitry Marchenko, S. N. Timoshnev
Publikováno v:
Journal of Experimental and Theoretical Physics. 118:600-610
The electronic structure of the n-GaN(0001) and Al x Ga1 − x N(0001) (x = 0.16, 0.42) surfaces and the Ba/n-GaN and Ba/AlGaN interfaces is subjected to in situ photoemission investigations in the submonolayer Ba coverage range. The photoemission sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dc2591c1d28b75a653443ba5be4c45e
https://doi.org/10.1134/s1063776114040098
https://doi.org/10.1134/s1063776114040098
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 75:589-592
Ba/n-GaN(0001) and Ba/n-AlGaN(0001) interfaces were investigated for the first time by means of ultraviolet photoelectron spectroscopy. The spectra of the photoemission from a valence band along with the spectra of the core levels of Ga 3d, Al 2p, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb18948341b413333b77bcd46bc88a7
https://doi.org/10.3103/s1062873811050078
https://doi.org/10.3103/s1062873811050078
Publikováno v:
International Journal of Nanoscience. :191-195
The method of photoyield spectroscopy with s- and p-polarized light excitation is developed for studies of 2D collective modes. The formation of nanoclusters has been studied for the Cs / GaAs (100) Ga -rich interface in a wide coverage range up to ~
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78122a4b5c03adec1ba773427f7b4852
https://doi.org/10.1142/s0219581x07004560
https://doi.org/10.1142/s0219581x07004560
Publikováno v:
Physics of the Solid State. 42:366-370
The cesium submonolayer coatings on the Ga-rich GaAs(100) surface at different coverages have been investigated by threshold photoemission spectroscopy. The electronic spectra of surface states and the ion-ization energies are analyzed. At a cesium c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81ae4affb3cff1657066f6587094564
https://doi.org/10.1134/1.1131214
https://doi.org/10.1134/1.1131214
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 73:670-672
It is found that Cs and Ba ultrathin coatings induce formation of a charge accumulation layer (2D electron channel) on the n-GaN(0001) surface. Photoemission of conduction electrons from the accumulation layer under excitation by light in the range o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed6da4918a27f1e3807bb33b5666acd9
https://doi.org/10.3103/s1062873809050426
https://doi.org/10.3103/s1062873809050426
Publikováno v:
Journal of Physics: Condensed Matter. 11:6679-6684
Adsorption of K on the Si(111)7 ? 7 surface has been investigated in the submonolayer coverage range at room temperature. The method of threshold photoemission spectroscopy using s- and p-polarized light excitation was employed for studying the evolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d018255bd7790a0967455eb4ef32cbd
https://doi.org/10.1088/0953-8984/11/35/306
https://doi.org/10.1088/0953-8984/11/35/306
Publikováno v:
Surface Review and Letters. :91-95
The electronic band structure of the Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) interfaces has been studied near the Fermi level at submonolayer coverages. The technique of threshold photoemission spectroscopy with linearly polarized light excitatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1135fc5e4eebe90cc4d29d345df78d5
https://doi.org/10.1142/s0218625x98000190
https://doi.org/10.1142/s0218625x98000190
Autor:
Timoshnev, S. N.1 (AUTHOR) timoshnev@mail.ru, Benemanskaya, G. V.2 (AUTHOR), Mizerov, A. M.1 (AUTHOR), Sobolev, M. S.1 (AUTHOR), Enns, Ya. B.1 (AUTHOR)
Publikováno v:
Semiconductors. Nov2023, Vol. 57 Issue 11, p508-512. 5p.
Autor:
Benemanskaya, G.1 Galina.Benemanskaya@mail.ioffe.ru, Lapushkin, M.1, Evtikhiev, V.1, Shkol'nik, A.1
Publikováno v:
JETP Letters. Nov2012, Vol. 96 Issue 5, p332-335. 4p. 1 Diagram, 3 Graphs.
Electronic structure and local interactions on a Si(100)2×1 surface with submonolayer Ba overlayers.
Publikováno v:
Journal of Experimental & Theoretical Physics. Dec98, Vol. 87 Issue 6, p1167. 5p.