Zobrazeno 1 - 10
of 91
pro vyhledávání: '"G Beshkov"'
Autor:
I. Iordanova, P. Aleksandrova, Blagoy Blagoev, R. Mirchev, L.I. Popova, E. Vlahkov, G. Beshkov
Publikováno v:
Thin Solid Films. 515:8078-8081
Thin films of CeO x are radio frequency magnetron sputtered on n-type (100) Si wafers from CeO 2 target. Structural investigations of CeO 2 /Si system after rapid thermal annealing ( RTA ) in the range of 800–1300 °C are presented. As-grown films
Publikováno v:
Journal of Materials Science: Materials in Electronics. 16:489-493
The structural changes in as- sputtered thin a-Si layer, and after boron doping with rapid thermal annealing are investigated by transmission electron microscopy. Stable hexagonal amorphous/crystalline series of SiO2 structures, as signed as SiO2 (Sn
Autor:
Wilhelm Kulisch, Cyril Popov, G. Beshkov, P.N. Gibson, Vladimír Vorlíček, Silviya Boycheva, G. Georgiev
Publikováno v:
Thin Solid Films. :99-104
Nanocrystalline diamond (NCD) films in an amorphous matrix have been deposited by standard microwave plasma chemical vapour deposition from CH4/N2 mixtures, and subsequently characterized comprehensively with respect to their structure and morphology
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 59:905-908
Depth profile analysis of a SnO2/SiO2/Si structure, modified with hexamethildisilazane and processed with rapid thermal annealing (RTA) in the temperature range of 800–1200 °C, is investigated in a hollow cathode discharge for the purpose of chara
Publikováno v:
Sensors and Actuators B: Chemical. 100:352-358
Simple method of SnO2 layer modification, using very small quantity of hexamethyldisilazane and rapid thermal annealing in the range 800–1200 °C is proposed. The distribution profile of the dopant elements of C, N, Si in the SnO2/SiO2/Si structure
Autor:
S.S. Georgiev, Shibin Zhang, Nicola Nedev, Elvira Fortunato, Leandro Raniero, T. Ivanov, Rodrigo Martins, G Beshkov
Publikováno v:
Materials Science Forum. :108-111
The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200degreesC for 2 minutes change their structure to polycrystalline and as a
Publikováno v:
Vacuum. 69:379-383
The influence of rapid thermal annealing (RTA) on quartz resonator equivalent dynamic parameters has been investigated aiming to establish the parameter changes resulting from such a treatment. The resonators have been formed on AT-cut quartz substra
Publikováno v:
Vacuum. 69:301-305
Silicon nitride films prepared by different chemical vapour deposition (CVD) techniques are studied by infrared (IR) and Raman spectroscopy. The main peak in the IR spectrum for films obtained in atmospheric pressure CVD (APCVD) and low pressure CVD
Publikováno v:
Surface and Coatings Technology. 161:11-19
Samples of phosphorus silicate glass (PSG) layers were deposited in a class 100 clean room in two kinds of industrial type reactors: by plasma enhanced chemical vapour deposition (PECVD) and micro pressure chemical vapour deposition (μPCVD) at worki
Autor:
G. Beshkov, M. Marinov, D. Bogdanov-Dimitrov, Takeshi Tanaka, G. M. Mladenov, M. Beshkova, Keishi Kawabata
Publikováno v:
Materials and Manufacturing Processes. 16:531-540
This research studied the structure and the electrical resistivity after rapid thermal annealing of CoxN thin film deposited by unbalanced radiofrequency magnetron-reactive sputtering (in 6:4 Ar + N2 mixture) at low pressure (6.7 × 10−1 Pa) with t