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pro vyhledávání: '"G Basset"'
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Akademický článek
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Publikováno v:
Journal of Aerospace Engineering. 27:238-248
The increasingly cluttered environment in space is placing a premium on future spacecraft and satellites that are capable of tracking and estimating the trajectory of unknown space debris autonomously without consistent communication with ground stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea1e03137d2db10932d1c72572518cf7
https://doi.org/10.1061/(asce)as.1943-5525.0000265
https://doi.org/10.1061/(asce)as.1943-5525.0000265
Autor:
J. P. Belle, S. Luca, R. V. Levin, A. Passero, J. L. Santailler, C. Calvat, J. Rothman, V. P. Khvostikov, N. S. Potapovich, G. Basset
Publikováno v:
Journal of Solar Energy Engineering. 129:304-313
GaSb material presents interesting properties for single junction thermophotovoltaic (TPV) devices. GaSb:Te single crystal grown with Czochralski (Cz) or modified Czochralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1e875b9ec1ffaa2aeeaf0b06860983
https://doi.org/10.1115/1.2734570
https://doi.org/10.1115/1.2734570
Autor:
Ludivine Pidol, A. Kahn-Harari, Bruno Viana, C. Calvat, B. Chambaz, G Basset, Bernard Ferrand
Publikováno v:
Journal of Crystal Growth. 275:e899-e904
Cerium-doped lutetium pyrosilicate (Lu 2 Si 2 O 7 :Ce 3+ , LPS) is an attractive scintillator for gamma-ray detection. The Czochralski growth of large single crystals of LPS is reported. Hardness and thermal expansion have been measured. Due to an an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4650959f40855150c3b035a623668d0
https://doi.org/10.1016/j.jcrysgro.2004.11.026
https://doi.org/10.1016/j.jcrysgro.2004.11.026
Autor:
Bernard Pelissier, Etienne Pernot, Cécile Moulin, Petra Pernot-Rejmánková, P Grosse, Alexander Pisch, Alain Basset, C Faure, G Basset, Thierry Billon, Roland Madar, Michel Pons, M Anikin, Antoine Passero
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0963f71c6e619cedf95b57b2bbd75db
https://doi.org/10.4028/www.scientific.net/msf.353-356.7
https://doi.org/10.4028/www.scientific.net/msf.353-356.7
Autor:
Michel Pons, Y Grange, C Faure, J.M. Dedulle, Jean-Marie Bluet, Elisabeth Blanquet, M Anikin, P Grosse, K Chourou, Claude Bernard, Roland Madar, G Basset
Publikováno v:
Materials Science and Engineering: B. :82-85
The influence of the temperature and its gradient on powder features and defect formation is discussed in the light of experimental results in the physical vapour transport process. The recrystallization of the source powder during crystal growth app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44d6d2d75af44b3f18fc46c953d8c270
https://doi.org/10.1016/s0921-5107(98)00450-4
https://doi.org/10.1016/s0921-5107(98)00450-4
Autor:
Y Grange, M Couchaud, M Anikin, P Grosse, C Faure, B Ferrand, K Chourou, G Basset, C. Calvat, Roland Madar, Jean-Marie Bluet
Publikováno v:
Materials Science and Engineering: B. :58-62
We have investigated the influence of crucible purity on SiC crystals grown by physical vapor transport. A quadrupole gas analyser has been used to monitor the outgas stage of the growth system. Secondary ion mass spectroscopy (SIMS) and glow dischar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bceb96fa459c859c84f2e9c32c474473
https://doi.org/10.1016/s0921-5107(98)00445-0
https://doi.org/10.1016/s0921-5107(98)00445-0
Autor:
C Faure, Y Grange, Jean-Marie Bluet, K Chourou, P Grosse, M Anikin, Michel Pons, G Basset, Roland Madar
Publikováno v:
Materials Science and Engineering: B. :73-76
6H-SiC ingots with diameters of 25-35 mm with flat natural surfaces have been grown by the Modified Lely method. Influence of the growth conditions and crucible geometry on the growth front shape and on the enlargement of the seeds have been investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cc698e9fc70829f215f5babea319541
https://doi.org/10.1016/s0921-5107(98)00448-6
https://doi.org/10.1016/s0921-5107(98)00448-6
Autor:
P Grosse, M Anikin, Claude Bernard, Roland Madar, G Basset, K Chourou, C Faure, Alexander Pisch, Michel Pons, J.M. Dedulle, Elisabeth Blanquet, Y Grange
Publikováno v:
Scopus-Elsevier
Different computational tools have helped to provide additional information on the sublimation growth of SiC single crystals by the modified-Lely method. The modelling work was motivated by the need of a better control of the local temperature field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5542c9e3fc2624dd1736c38f194f4e69
https://doi.org/10.1016/s0921-5107(98)00439-5
https://doi.org/10.1016/s0921-5107(98)00439-5