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Autor:
I.V. Kryukova, V I Leskovich, E V Matveenko, V V Lebedev, V I Gurfinkel, N P Khatyrev, S S Strel'chenko, V A Chapnin, G B Lun'kina
Publikováno v:
Soviet Journal of Quantum Electronics. 6:868-870
An investigation was made of the cathodoluminescence of epitaxial films and bulk crystals of InAs with carrier densities in the range n = 5×1015–1018 cm–3 and p = 6×1016–1.5×1018 cm–3. Stimulated emission was obtained when epitaxial n-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1858ddcc3261efc98751e47734290be0
https://doi.org/10.1070/qe1976v006n07abeh011713
https://doi.org/10.1070/qe1976v006n07abeh011713
