Zobrazeno 1 - 10
of 15
pro vyhledávání: '"G A M Hurkx"'
Publikováno v:
Nano Letters. 7:896-899
We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59091cd82d3cda5c0464338a4f00af3e
https://doi.org/10.1021/nl062681n
https://doi.org/10.1021/nl062681n
Autor:
G. A. M. Hurkx, H.-S. Philip Wong, Mehdi Asheghi, Kenneth E. Goodson, Byoungil Lee, John P. Reifenberg, Sangbum Kim
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
In this paper, we study thermal disturbance and its impact on reliability using a novel measurement structure - the micro-thermal stage (MTS). The small thermal time constant of the MTS extends the time-scale of temperature dependence measurement to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::932a67cfb2d0aa1095d5fc25caf1cdd7
https://doi.org/10.1109/irps.2010.5488847
https://doi.org/10.1109/irps.2010.5488847
Autor:
F. J. Jedema, M. A. A. in 't Zandt, R. A. M. Wolters, D. Tio Castro, G. A. M. Hurkx, R. Delhougne, D. J. Gravesteijn, K. Attenborough
Publikováno v:
STARTPAGE=43;ENDPAGE=45;TITLE=None
For phase change random access memory applications, the scaling perspective of the 3 main programming parameters is essential. The programming time will largely determine the obtainable data rate. The required programming current will largely determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99a39491715e8c6ec695be2e3d3b41fb
https://doi.org/10.1109/nvsmw.2008.18
https://doi.org/10.1109/nvsmw.2008.18
Autor:
P. Agarwal, G. A. M. Hurkx
Publikováno v:
Physical Review B. 73
The formation of the depletion layer around a semiconductor $p$-$n$ junction is calculated quantum mechanically. For doping concentrations below $\ensuremath{\sim}{10}^{18}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ we recover the fam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3907ffea665f84e0a4233b7e35250b88
https://doi.org/10.1103/physrevb.73.233309
https://doi.org/10.1103/physrevb.73.233309
Autor:
Dirk J. Gravesteijn, J. L. M. Oosthoek, G. A. M. Hurkx, Bart J. Kooi, Martin Salinga, Daniel Krebs
Publikováno v:
Journal of Applied Physics, 112(8):084506. AMER INST PHYSICS
Temporal drift of the amorphous resistance in phase-change random access memory (PRAM) is a temperature accelerated process. Increasing the temperature will speed up the drift process which is shown to affect measurements of the activation energy of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4deb98ee81ea1176068f96b3c224dc3
https://doi.org/10.1063/1.4759239
https://doi.org/10.1063/1.4759239
Autor:
Mehdi Asheghi, Chiyui Ahn, Rakesh Jeyasingh, G. A. M. Hurkx, Kenneth E. Goodson, Hon-Sum Philip Wong, Byoungil Lee
Publikováno v:
Japanese Journal of Applied Physics. 51:02BD06
The crystallization properties of phase-change memory (PCM) in the presence of thermal disturbances are investigated with a novel micro-thermal stage. It is found that the recrystallization time due to thermal disturbances significantly varies depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a43f2494d3b7782c4ec9d47e515d2c6b
https://doi.org/10.1143/jjap.51.02bd06
https://doi.org/10.1143/jjap.51.02bd06
Autor:
Chiyui Ahn, Kenneth E. Goodson, Byoungil Lee, H.-S. Philip Wong, Mehdi Asheghi, Rakesh Jeyasingh, G. A. M. Hurkx
Publikováno v:
Journal of Applied Physics. 110:114520
The crystallization properties of phase-change memory (PCM) cells are studied at microsecond time scales using a novel micro-thermal stage. The time for recrystallization due to thermal disturbances is measured for varying amorphous volume fractions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2043ea4e596e470b07f76bc42e8aedf1
https://doi.org/10.1063/1.3667295
https://doi.org/10.1063/1.3667295
Publikováno v:
Semiconductor Science & Technology; Jan2007, Vol. 22 Issue 1, pS9-S12, 4p
Autor:
W. van Haeringen, G A M Hurkx
Publikováno v:
Journal of Physics C: Solid State Physics. 18:5617-5627
The sub-band structure at zero temperature of a two-dimensional electron gas at an AlxGa1-xAs-GaAs heterojunction interface is calculated in the envelope function approach. A model is developed in which the potential energy, the sub-band structure, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a76175d68736fea75c056b92c98a06
https://doi.org/10.1088/0022-3719/18/29/012
https://doi.org/10.1088/0022-3719/18/29/012
Autor:
G. A. M. Hurkx, A. G. Tangena
Publikováno v:
Journal of Engineering Materials and Technology. 108:230-232
A method is presented for estimating the plastic part of stress-strain curves of metal coatings, using a Brinell indentation test. The accuracy of the stress-strain curves obtained in this way is tested by using these curves in a finite element calcu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda4e35df41fd82bf287c6cfe2c436b4
https://doi.org/10.1115/1.3225873
https://doi.org/10.1115/1.3225873