Zobrazeno 1 - 10
of 146
pro vyhledávání: '"G A Booker"'
Autor:
G R Booker, R G Woodham
A high-sensitivity SDLTS system has been built. A new technique termed Scanning Double Deep Level Transient Spectroscopy (SDDLTS) has been developed which allows efficient interaction of the electron beam with deep levels that act as strong recombina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e307b29b9e5eea051dca9626537cd750
https://doi.org/10.1201/9781003069621-123
https://doi.org/10.1201/9781003069621-123
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84dc8c908eba78b058844d319bc2eff6
https://doi.org/10.1201/9781003069621-65
https://doi.org/10.1201/9781003069621-65
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9d4b35eccba59108f9271af1c2126c0
https://doi.org/10.1201/9781003069621-44
https://doi.org/10.1201/9781003069621-44
TED, TEM and HREM studies of OMVPE AlInAs epitaxial layers grown at 600°C have revealed the first evidence of atomic ordering in this Group III-V compound semiconductor alloy. TED results indicate CuPt type ordering on {111} planes, with only two va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df19470307f37afd4d5fe131b82548d7
https://doi.org/10.1201/9781003069621-12
https://doi.org/10.1201/9781003069621-12
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28a072b94b2205201f4cbbda08e05de
https://doi.org/10.1201/9781003069621-72
https://doi.org/10.1201/9781003069621-72
Autor:
G R Booker, M I J Beale
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::046df8234655e000969c3b831a715df9
https://doi.org/10.1201/9781003069614-36
https://doi.org/10.1201/9781003069614-36
Autor:
C. G. Tuppen, R.P. Arrowsmith, M C Wilson, P.L.F. Hemment, M.R. Taylor, G R Booker, A E Glaccum, R M Dobson
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f21080163a46f6e17a1e787625eda71d
https://doi.org/10.1201/9781003069614-73
https://doi.org/10.1201/9781003069614-73
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4583d359a6855a7f09c24aeaaa4f1e7a
https://doi.org/10.1201/9781003069614-70
https://doi.org/10.1201/9781003069614-70
Autor:
C A Warwick, G R Booker
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cf679fc5cbed086d8cea2af3a83024d
https://doi.org/10.1201/9781003069614-48
https://doi.org/10.1201/9781003069614-48
Autor:
G R Booker, K D Yoo
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::286e766c28c532fb205a7d473dcbba6c
https://doi.org/10.1201/9781351074629-104
https://doi.org/10.1201/9781351074629-104