Dopant imaging of power semiconductor device cross sections

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Publikováno v: In Microelectronic Engineering 1 July 2016 160:18-21

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Kelvin probe force microscopy of nanocrystalline TiO2 photoelectrodes.

Autor: Henning A; Department of Physics, University of Basel, Klingelbergstrasse 82 CH4056, Switzerland ; School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel., Günzburger G, Jöhr R, Rosenwaks Y, Bozic-Weber B, Housecroft CE, Constable EC, Meyer E, Glatzel T

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Macroscopic elastic stress and strain produced by irradiation.

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AFM study of advanced composite materials for organic photovoltaic cells with active layer based on P3HT:PCBM and chiral photosensitive liquid crystalline dopants.

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