Zobrazeno 1 - 10
of 1 020
pro vyhledávání: '"Güntherodt, G."'
Autor:
Schreiber, L. R., Schwark, C., Güntherodt, G., Lepsa, M., Adelmann, C., Palmstrøm, C. J., Lou, X., Crowell, P. A., Beschoten, B.
Publikováno v:
Phys. Rev. B 104, 195202 (2021)
The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way
Externí odkaz:
http://arxiv.org/abs/2111.09242
Autor:
Müsgens, N., Maynicke, E., Weidenbach, M., Smits, C. J. P., Bückins, M., Mayer, J., Beschoten, B., Güntherodt, G.
Publikováno v:
J. Phys. D: Appl. Phys. 41, 164011 (2008)
Molecular beam epitaxy is used to fabricate magnetic single and double layer junctions which are deposited in prefabricated nanostencil masks. For all Co | Cu | Co double layer junctions we observe a stable intermediate resistance state which can be
Externí odkaz:
http://arxiv.org/abs/2103.13099
Autor:
Bisti, F., Rogalev, V. A., Karolak, M., Paul, S., Gupta, A., Schmitt, T., Güntherodt, G., Eyert, V., Sangiovanni, G., Profeta, G., Strocov, V. N.
Publikováno v:
Phys. Rev. X 7, 041067 (2017)
Chromium dioxide CrO$_2$ belongs to a class of materials called ferromagnetic half-metals, whose peculiar aspect is to act as a metal in one spin orientation and as semiconductor or insulator in the opposite one. Despite numerous experimental and the
Externí odkaz:
http://arxiv.org/abs/1607.01703
Autor:
Tonkikh, A. A., Voloshina, E. N., Werner, P., Blumtritt, H., Senkovskiy, B., Güntherodt, G., Parkin, S. S. P., Dedkov, Yu. S.
Publikováno v:
Sci. Rep. 6, 23547 (2016)
Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxia
Externí odkaz:
http://arxiv.org/abs/1510.04034
Publikováno v:
Synthetic Metals 210 Part A, 42 (2015)
In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabricatio
Externí odkaz:
http://arxiv.org/abs/1503.01735
Publikováno v:
2D Materials 2, 024001 (2015)
Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit spin transpo
Externí odkaz:
http://arxiv.org/abs/1412.6224
Autor:
Volmer, F., Drögeler, M., Maynicke, E., Driesch, N. von den, Boschen, M. L., Güntherodt, G., Stampfer, C., Beschoten, B.
Publikováno v:
Phys. Rev. B 90, 165403 (2014)
By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear chara
Externí odkaz:
http://arxiv.org/abs/1408.1427
Autor:
Volmer, F., Drögeler, M., Maynicke, E., Driesch, N. von den, Boschen, M. L., Güntherodt, G., Beschoten, B.
Publikováno v:
Phys. Rev. B 88, 161405(R) (2013)
We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our single la
Externí odkaz:
http://arxiv.org/abs/1305.6484
Autor:
Sperlich, M., König, C., Güntherodt, G., Sekiyama, A., Funabashi, G., Tsunekawa, M., Imada, S., Shigemoto, A., Okada, K., Higashiya, A., Yabashi, M., Tamasaku, K., Ishikawa, T., Renken, V., Allmers, T., Donath, M., Suga, S.
Bulk-sensitive hard x-ray photoemission spectroscopy (HAXPES) reveals for as-grown epitaxial films of half-metallic ferromagnetic CrO2(100) a pronounced screening feature in the Cr 2p3/2 core level and an asymmetry in the O 1s core level. This gives
Externí odkaz:
http://arxiv.org/abs/1304.2226
Autor:
Schreiber, L. R., Schwark, C., Richter, S., Weier, C., Güntherodt, G., Adelmann, C., Palmstrom, C. J., Lou, X., Crowell, P. A., Beschoten, B.
Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we de
Externí odkaz:
http://arxiv.org/abs/1204.4371