Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Günther Koppitsch"'
Autor:
Martin Sagmeister, Günther Koppitsch, Paul Muellner, Stefan Nevlacsil, Alejandro MaeseNovo, Rainer Hainberger, Dana Seyringer, Jochen Kraft
Publikováno v:
Proceedings, Vol 2, Iss 13, p 1023 (2018)
As a leading provider of sensing solutions ams AG is developing semiconductor sensors in a wide variety of fields. One of the key competences of ams AG lies in optical sensing. To widen the company’s portfolio in this field we have been developing
Externí odkaz:
https://doaj.org/article/e83ab880ed0c46f5b7b81763429e9288
Autor:
Martin Sagmeister, Rainer Hainberger, Gerald Meinhardt, Moritz Eggeling, J. Edlinger, Paul Muellner, Alejandro Maese-Novo, Wolfgang Drexler, M. Vlaskovic, Dana Seyringer, Jochen Kraft, Horst Zimmermann, Elisabet Rank, Günther Koppitsch
Publikováno v:
ICTON
We present the design, simulation, and technological verification of a compact 256-channel, 42-GHz silicon nitride based AWG-spectrometer dedicated to the realization of an on-chip spectral domain optical coherence tomography (SD-OCT) system. The spe
Autor:
Moritz Eggeling, Jochen Kraft, Paul Muellner, Jörg Schotter, Günther Koppitsch, Stefan Nevlacsil, Alejandro Maese-Novo, Florian Vogelbacher, Martin Sagmeister, Rainer Hainberger
Publikováno v:
Smart Photonic and Optoelectronic Integrated Circuits XXI
We report the simulation, design and experimental validation of various PECVD silicon nitride photonic building blocks required for the implementation of a CMOS-compatible photonic integrated circuit technology platform operating in the 850 nm and 60
Autor:
Jochen Kraft, Günther Koppitsch, Paul Muellner, Alejandro Maese-Novo, Horst Zimmermann, M. Vlaskovic, Dana Seyringer, C. Burtscher, Wolfgang Drexler, Rainer Hainberger, J. Edlinger, Gerald Meinhardt, Elisabet Rank, Martin Sagmeister
Publikováno v:
Nanoengineering: Fabrication, Properties, Optics, and Devices XV.
In this paper we present the size reduction of a 160-channel, 50-GHz Si3N4 based AWG-spectrometer. The spectrometer was designed for TM-polarized light with a central wavelength of 850 nm applying our proprietary “AWG-Parameters” tool. For the si
Publikováno v:
Proceedings IMCS 2018
17th International Meeting on Chemical Sensors-IMCS 2018
17th International Meeting on Chemical Sensors-IMCS 2018
Autor:
Dana Seyringer, Günther Koppitsch, Rainer Hainberger, Alejandro Maese-Novo, Jochen Kraft, Martin Sagmeister, Gerald Meinhardt, Paul Muellner
Publikováno v:
PHOTOPTICS
Scopus-Elsevier
Scopus-Elsevier
Autor:
Rainer Hainberger, Jochen Kraft, Dana Seyringer, Gerald Meinhardt, J. Edlinger, C. Burtscher, Günther Koppitsch, Alejandro Maese-Novo, Stefan Partel, Paul Muellner
Publikováno v:
SPIE Proceedings.
We present the design of 20-channel, 50-GHz Si 3 N 4 based AWG applying our proprietary AWG-Parameters tool. For the simulations of the AWG layout we used PHASAR photonics tool from Optiwave. The simulated transmission characteristics were then evalu
Autor:
Rainer Hainberger, Paul Muellner, Günther Koppitsch, Jochen Kraft, J. Edlinger, Dana Seyringer, Stefan Partel, C. Burtscher, Alejandro Maese-Novo, Gerald Meinhardt
Publikováno v:
2016 18th International Conference on Transparent Optical Networks (ICTON).
We present the design of 8-channel, 100 GHz Si 3 N 4 based AWGs applying our proprietary AWG-Parameters tool. This tool was already used in various silica based AWG designs and also technologically verified. The designed AWGs were simulated by two co
Autor:
Jörg Siegert, Günther Koppitsch, Cathal Cassidy, Jochen Kraft, Matthias Petzold, Ewald Wachmann, Jordi Teva, C. Schmidt, Franz Schrank, Frank Altmann, Sebastian Brand
Publikováno v:
2011 IEEE 61st Electronic Components and Technology Conference (ECTC).
Today 3D interconnection approaches are considered to provide one of the most promising enabling technologies for “More than Moore” solutions. In particular, 3D integration can provide significant progress in semiconductor device development rega
Autor:
Cathal Cassidy, Franz Schrank, M. Steiner, D. Erwin, E. Raz-Moyal, Jochen Kraft, Günther Koppitsch, E. Brandlhofer
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper is concerned with characterization and failure analysis challenges posed by 3D integration of semiconductor devices, with a particular focus on wafer bonded components and Through Silicon Vias (TSV). Requirements for sample preparation are