Výsledky vyhledávání - "Gérard Tartavel"

Optimisation of Surface Capacitance and Leakage Currents on Ion Beam Sputtered SrTiO3-Based MIM Capacitors for Above IC Technology

Autor: Ludivine Galéra, Laurent Ulmer, Emmanuel Defay, Gérard Tartavel, Julie Guillan, Bernard Andre, Françoise Baume

Publikováno v: Integrated Ferroelectrics. 67:93-101

SrTiO3 (STO) deposition was performed by Ion Beam Sputtering on Pt/TiO2/SiO2/Si substrates. We showed that curing annealing after top electrode deposition is essential to achieve low leakage currents. A decrease of the leakage currents for thinner ST

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3657fead6a2f9b1dc35d5fffb82152a4
https://doi.org/10.1080/10584580490898560

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Deposition and Characterisation of SrTiO 3 Thin Films Deposited by Ion Beam Sputtering on Platinized Silicon Substrates

Autor: Denise Muyard, Emmanuel Defay, Françoise Baume, Gérard Tartavel, Bernard Andre, Laurent Ulmer

Publikováno v: Ferroelectrics. 288:121-132

STO deposition was performed by IBS on Pt/(TiOx or TiNy)/SiO 2 /Si substrates. Correct stoichiometry was obtained, as observed by RBS. Ti, O 2 -annealed Ti, N 2 -annealed Ti displayed equivalent glue layer performance for STO integration. Perovskite

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8018a5426f24654077940ec5f5ded0b4
https://doi.org/10.1080/00150190390211945

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Electrical characterization of PMNT thin films

Autor: Denis Remiens, Marc Aid, Gérard Tartavel, Emmanuel Defay, Eric Cattan, E. Fribourg-Blanc

Publikováno v: Ferroelectrics, 55
HAL

This paper presents our investigation in characterization of thin films of lead magnesium niobate—lead titanate (PMNT). We deposited films by rf magnetron sputtering on platinized silicon. As-deposited films are annealed and electrical characteriza

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdcf7a5be9b83dcbb30618a8aedf718f
https://hal.archives-ouvertes.fr/hal-00146474

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Electromigration Characterization of Damascene Copper Interconnects: Comparison Between CVD Copper and ECD Copper

Autor: Gérard Tartavel, Lucile Arnaud, Gérard Lormand, T. Berger

Publikováno v: MRS Proceedings. 714

We have characterized the electromigration performance of copper damascene interconnects using moderately and highly accelerated lifetime tests respectively at package and wafer level. Two metallizations have been studied: Chemical Vapor Deposition (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a78008916ba324b7066df2050e5e3489
https://doi.org/10.1557/proc-714-l6.9.1

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Analysis of Electromigration Extrusion Failure Mode in Damascene Copper Interconnects

Autor: F. Mondon, Robert Truche, Lucile Arnaud, T. Berger, Gérard Tartavel

Publikováno v: MRS Proceedings. 714

The electromigration performance of copper damascene interconnects has been studied with respect to hillock formation and is compared to void formation failure mode. The metal lines consisted of Chemical Vapor Deposition (CVD) copper deposited on CVD

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da65fed6b223337b38969696eadb60be
https://doi.org/10.1557/proc-714-l9.1.1

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