Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Gérard Sarrabayrouse"'
Autor:
Stylianos Siskos, Gérard Sarrabayrouse
Publikováno v:
Radiation Physics and Chemistry. 81:339-344
The low dose limit and the accuracy of high sensitivity MOS ionizing radiation dosimeters fabricated at LAAS-CNRS are investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc801807ccabe1e461ef09fccf0046ed
https://doi.org/10.1016/j.radphyschem.2011.11.020
https://doi.org/10.1016/j.radphyschem.2011.11.020
Autor:
Gérard Sarrabayrouse, M. Gavelle, M. Zamani, M. Fragopoulou, Stylianos Siskos, Emmanuel Scheid
Publikováno v:
Radiation Physics and Chemistry. 80:1437-1440
A MOSFET-based low-energy neutron dosimeter has been fabricated using a 10 B loaded gate electrode as ( n , α ) converter. The response to thermal neutrons has been studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8878534b05faab9108f78437e297a5ac
https://doi.org/10.1016/j.radphyschem.2011.08.001
https://doi.org/10.1016/j.radphyschem.2011.08.001
Autor:
Stylianos Siskos, Gérard Sarrabayrouse, M. Zamani, Th. Laopoulos, M. Fragopoulou, V. Konstantakos
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 621:611-614
A new dosemeter based on a metal-oxide-semiconductor field effect transistor sensitive to both neutrons and gamma radiation was manufactured at LAAS-CNRS Laboratory, Toulouse, France. In order to be used for neutron dosimetry, a thin film of lithium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de9fd636c87ade195a4d9be1d004066d
https://doi.org/10.1016/j.nima.2010.06.095
https://doi.org/10.1016/j.nima.2010.06.095
Publikováno v:
Sensors and Actuators A: Physical. 147:165-168
One of the key requirements biomedical and pharmaceutical sensors have to satisfy is their ability to withstand sterilization cycle. In this paper, the influence of γ-sterilization on the electrical and electrochemical characterizations of pH-sensit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78835aa3159af7971d4e57b413e47eb9
https://doi.org/10.1016/j.sna.2008.05.022
https://doi.org/10.1016/j.sna.2008.05.022
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 589:330-337
An IC semi-Gaussian shaper architecture for X-rays silicon strip detectors is presented. The specific structure is based on operational transconductance amplifiers (OTAs) and was implemented using an alternative design technique. The shaper was desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dddc10a1151a93ff3132ca3cb928fdc0
https://doi.org/10.1016/j.nima.2008.02.048
https://doi.org/10.1016/j.nima.2008.02.048
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 583:469-478
An analysis of readout front-end electronics Semi-Gaussian (S-G) shapers is carried out. An innovative design methodology is proposed and advanced filter design techniques based on Operational Transconductance Amplifiers (OTA) are used. Five CMOS sha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e3836f85e384d63ce8b869ad59c3e1b
https://doi.org/10.1016/j.nima.2007.09.034
https://doi.org/10.1016/j.nima.2007.09.034
Publikováno v:
Microelectronics Reliability. 47:1222-1227
In this paper, BSIM4.X and HSPICE flicker noise models are analytically examined and directly compared to noise measurements, using NMOS and PMOS devices fabricated in a 0.6 μm process by Austria Mikro Systeme (AMS). MOSFET 1/ f noise measurements a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91084241c44e03a1e243db4d036f8241
https://doi.org/10.1016/j.microrel.2006.09.021
https://doi.org/10.1016/j.microrel.2006.09.021
Publikováno v:
The European Physical Journal Applied Physics. 31:169-178
In this paper, we present the theoretical and experimental results of the influence of a charge trapped in ultra-thin oxide of metal/ultra-thin oxide/semiconductor structures (MOS) on the I(Vg) current-voltage characteristics when the conduction is o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cae62d014ea69c4fe705387a8568799
https://doi.org/10.1051/epjap:2005055
https://doi.org/10.1051/epjap:2005055
Autor:
Gérard Sarrabayrouse, F. Lozes, S. Fourment, Philippe Arguel, S. Bonnefont, J. Jay, Yves Jourlin, Olivier Parriaux, J.-L. Noullet
Publikováno v:
Sensors and Actuators A: Physical. 110:294-300
This paper describes a compact and low cost micro-opto-electro-mechanical displacement sensor. Our purpose is the fabrication of a long range, nanometer resolved encoder using a standard CMOS technology, in order to integrate the optical metrology sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86ec7f42c757b928531bac6ac447fbb
https://doi.org/10.1016/j.sna.2003.10.067
https://doi.org/10.1016/j.sna.2003.10.067
Publikováno v:
Sensors and Actuators B: Chemical. 86:111-121
An electronic structure associating a field-effect based sensor and a MOSFET amplifier is presented, evidencing an amplification of the sensor detection properties. This structure is applied to a field-effect capacitor (FEC) sensor, leading to the bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e988e47163f38bd3c60be2febf933d3
https://doi.org/10.1016/s0925-4005(02)00168-5
https://doi.org/10.1016/s0925-4005(02)00168-5