Structural and electronic properties of ZnMgO/ZnO quantum wells

Autor: Borge Vinter, Christian Morhain, Jean-Michel Chauveau, O. Tottereau, Gérard Neu, M. Teisseire-Doninelli, B. Lo, Christiane Deparis, Xiaodong Tang, M. Laügt, Philippe Vennéguès

Publikováno v: Superlattices and Microstructures. 38:455-463

High-quality ZnMgO/ZnO quantum wells (QWs) showing no phase separation were grown on Al2O3(0001). Growth temperature was shown to play a major role in the stabilisation in the wurtzite phase of ZnMgO barrier layers as well as in their surface morphol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8956f0687d35de77e868fbbc47d74154
https://doi.org/10.1016/j.spmi.2005.08.055

Self-Compensation of the Phosphorus Acceptor in ZnSe

Autor: Gérard Neu, Christian Morhain, J. P. Faurie, M. Teisseire, H. P. Gislason, Eric Tournié, D. Seghier

Publikováno v: physica status solidi (b). 229:251-255

ZnSe epilayers doped with plasma-activated phosphorus have been investigated by means of optical and electrical measurements. It is found that P Se forms a shallow acceptor with binding energy of 85 meV which is identified in the optical emission spe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f566ad9ccb792620eacdec0a95ccd5af
https://doi.org/10.1002/1521-3951(200201)229:1<251::aid-pssb251>3.0.co

Donor and Donor Bound Exciton Spectroscopy in Wurtzite GaN Heterostructures

Autor: Gérard Neu, Christian Morhain, M. Teisseire

Publikováno v: physica status solidi (b). 228:501-504

Neutral donor bound excitons (I 2 ) and donor related electronic Raman scattering (ERS) in wurtzite GaN epilayers deposited onto Si, 6H-SiC, Al 2 O 3 and GaN substrates are studied at low temperature by high-resolution selective photoluminescence spe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca9aca54b69970e0bd07c8e33446677b
https://doi.org/10.1002/1521-3951(200111)228:2<501::aid-pssb501>3.0.co

Phonon-assisted optical transitions in GaN with impurities and defects

Autor: Mikhail F. Limonov, Yu. E. Kitaev, P. Tronc, Gérard Neu, G. Wang

Publikováno v: Physica B: Condensed Matter. :291-298

We have classified all the possible types of phonon-assisted optical processes involving bound or extended initial, final, and virtual (intermediate) electron states and formulated, for the first time, in terms of site symmetry, the selection rules f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d992d8887d901d1b445eae92825c2f51
https://doi.org/10.1016/s0921-4526(01)00443-4

Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

Autor: Izabella Grzegory, Benjamin Damilano, S. Porowski, Martin Albrecht, Pierre Lefebvre, Jean Massies, M. Teissere, Bernard Gil, Nicolas Grandjean, Mathieu Gallart, Gérard Neu

Publikováno v: Scopus-Elsevier
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2000, 88 (1), pp.183. ⟨10.1063/1.373640⟩

GaN epilayers and GaN/AlGaN quantum wells (QWs) were grown by molecular beam epitaxy on GaN(0001) single crystal substrates. Transmission electron microscopy (TEM) was used to assess the crystal quality of the homoepitaxial layers. A dislocation dens

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::599849407dde7373669a665e0548cdb1
https://doi.org/10.1063/1.373640