Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

Autor: Hans Jürgen von Bardeleben, Abdul Salam Al Atem, Faraz A. Inam, Stefania Castelletto, Sophie Hameau, Jean-Marie Bluet, Shin-ichiro Sato, Alberto Boretti, Ahmed Fahad Almutairi, Gérard Guillot

Publikováno v: Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2019, 10, pp.2383-2395. ⟨10.3762/bjnano.10.229⟩
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 2383-2395 (2019)

We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropilla

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a6e3e3586b56d2fbcdc9b9f9db8b5a7
https://repo.qst.go.jp/records/78070

Electrical properties of p-type Zn:Ga2O3 thin films

Autor: Ekaterine Chikoidze, Corinne Sartel, Hayate Yamano, Zeyu Chi, Guillaume Bouchez, François Jomard, Vincent Sallet, Gérard Guillot, Kamel Boukheddaden, Amador Pérez-Tomás, Tamar Tchelidze, Yves Dumont

Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
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Ultra-wide bandgap gallium oxide (∼5 eV) has emerged as a novel semiconductor platform for extending the current limits of power electronics and deep ultraviolet optoelectronics at a predicted fraction of cost. Finding effective acceptor dopant for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f700610045c9958bf3192c5d5d3b280c
https://doi.org/10.1116/6.0001766

Deep traps localization in AlGaN/GaN MIS-HEMTs by a comparative study using capacitance and current deep level transient spectroscopies

Autor: Gérard Guillot, Philippe Ferrandis, Georges Bremond, Erwan Morvan, Mariam El-Khatib

Publikováno v: Journal of Physics: Conference Series
Journal of Physics: Conference Series, IOP Publishing, 2019, 1190, pp.012013. ⟨10.1088/1742-6596/1190/1/012013⟩
Journal of Physics: Conference Series, 2019, 1190, pp.012013. ⟨10.1088/1742-6596/1190/1/012013⟩

In this study, deep traps in multiple-finger normally-off AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) were identified. The localization of these traps has been established by a comparative study using capaci

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::460994d34e4ee24b3f759aa88f189083
https://hal.archives-ouvertes.fr/hal-02494693

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Autor: Gérard Guillot, Philippe Ferrandis, Erwan Morvan, Marie-Anne Jaud, Matthew Charles, Mariam El-Khatib, Georges Bremond

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2019, 125 (3), pp.035702. ⟨10.1063/1.5055926⟩
Journal of Applied Physics, 2019, 125 (3), pp.035702. ⟨10.1063/1.5055926⟩

The localization of deep traps in normally-off AlGaN/GaN metal-oxide-semiconductor channel high-electron mobility transistors has been established by means of capacitance and current deep level transient spectroscopies (DLTS). Electrical simulations

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc934a07e09fb1d2ed567770310c2b5a
https://hal.archives-ouvertes.fr/hal-01998103

AlGaN/GaN metal-insulator-semiconductor capacitors with a buried Mg doped layer characterized by deep level transient spectroscopy and photoluminescence

Autor: Philippe Ferrandis, Erwan Morvan, Gérard Guillot, Mariam El-Khatib, Georges Bremond

Publikováno v: SPIE Proceedings
SPIE OPTO 2018
SPIE OPTO 2018, Jan 2018, San Fransisco, United States. pp.39, ⟨10.1117/12.2289067⟩

International audience; GaN material holds an advantageous position in the fabrication of power devices. This advantage is manifested by the possibility to perform GaN based devices working in high voltage, high current, high frequency and high tempe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd32a82c1ad0ea7773790685d674a75a
https://hal.archives-ouvertes.fr/hal-01928350