Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Gérard Destefanis"'
Autor:
Jean-Pierre Chatard, Michel Girard, Joel R. Deschamps, Gérard Destefanis, Philippe Medina, Patrick Audebert, Jean-Paul Chamonal
Publikováno v:
International Conference on Space Optics — ICSO 1997.
Autor:
L. Mollard, J. P. Zanatta, C. Lobre, N. Baier, O. Boulade, V. Moreau, G. Bourgeois, C. Cervera, O. Gravrand, Gérard Destefanis
Publikováno v:
Journal of Electronic Materials. 44:3144-3150
We report recent developments at Commissariat a l’Energie Atomique-Laboratoire d’Electronique des Technologies de l’Information Infrared Laboratory on the processing and characterization of p-on-n HgCdTe (MCT) planar infrared focal plane arrays
Autor:
G. Bourgeois, Alain Manissadjian, Gérard Destefanis, Jean-Paul Barnes, Laurent Rubaldo, S. Viollet-Bosson, A. Kerlain, Sylvain Gout, F. Milesi, O. Gravrand, N. Baier, L. Mollard, C. Lobre
Publikováno v:
Journal of Electronic Materials. 43:802-807
This paper reports on recent developments made at the DEFIR joint laboratory on fabrication of planar p-on-n arsenic (As)-ion-implanted HgCdTe photodiodes. Our infrared focal-plane arrays (IRFPAs) cover a wide spectral range, from the short-wave infr
Autor:
L. Mollard, Gérard Destefanis, V. Destefanis, J. Rothman, Laurent Rubaldo, A. Kerlain, N. Baier, O. Gravrand, D. Brellier, Michel Vuillermet, Sylvette Bisotto
Publikováno v:
Journal of Electronic Materials. 42:3349-3358
The purpose of this paper is to review the trends in HgCdTe research, illustrating the discussed ideas with the latest results obtained at DEFIR (CEA-LETI and Sofradir joint laboratory). The beginning of this paper is devoted to an extended introduct
Publikováno v:
Journal of Electronic Materials. 41:2686-2693
We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range (SWIR) for space applications. These FPAs are designed to detect very low flux in the 2-μm
Autor:
Jean-Paul Barnes, A. Ferron, L. Mollard, Laurent Rubaldo, O. Gravrand, A. Kerlain, N. Baier, F. Milesi, A. M. Papon, G. Bourgeois, Gérard Destefanis
Publikováno v:
Journal of Electronic Materials. 40:1830-1839
In this paper recent developments made by the French Atomic Energies and Alternative Energies Commission (CEA) at the Electronics and Information Technology Laboratory (LETI) on the fabrication of planar p-on-n HgCdTe photodiodes are reported. Result
Autor:
J. Rothman, L. Mollard, G. Bourgeois, A. M. Papon, Michael Tchagaspanian, Gérard Destefanis, N. Baier, Jean-Paul Barnes, J. P. Zanatta, C. Pautet, P. Ballet, P. Fougères
Publikováno v:
Journal of Electronic Materials. 38:1805-1813
This paper reviews recent developments in the characterization of planar p-on-n photodiodes fabricated from long- and mid-wavelength Hg1−x Cd x Te at␣the Electronics and Information Technology Laboratory (LETI). The Hg1−x Cd x Te epitaxial laye
Autor:
Gérard Destefanis, S. Bernhardt, Jean-Paul Chamonal, Gilbert Vincent, Johan Rothman, Sophie Derelle, Laurent Mollard, Gwladys Perrais
Publikováno v:
Journal of Electronic Materials. 38:1790-1799
The impulse response in frontside-illuminated mid-wave infrared HgCdTe electron avalanche photodiodes (APDs) has been measured with localized photoexcitation at varying positions in the depletion layer. Gain measurements have shown an exponential gai
Publikováno v:
Journal of Electronic Materials. 37:1261-1273
The response time of front-sided illuminated n-on-p Hg0.7Cd0.3Te electron avalanche photodiodes (e-APDs) at T = 77 K was studied using impulse response measurements at λ = 1.55 μm. We measured typical rise and fall times of 50 ps and 800 ps, respec
Autor:
J. Rothman, P. Ballet, A. Million, Jacques Baylet, O. Gravrand, F. Rothan, Gérard Destefanis, P. Castelein, Jean-Paul Chamonal
Publikováno v:
Journal of Electronic Materials. 36:1031-1044
In this paper we show the latest achievements of HgCdTe-based infrared bispectral focal plane arrays (FPAs) at LETI infrared laboratory. We present and compare the two different pixel architectures that are studied now in our laboratory, named “NPN