Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Gérald Bastard"'
Publikováno v:
Physical Review B. 104
We present gate voltage and temperature dependent transport measurements of InAs/GaSb/InAs triple quantum wells (TQWs) with a designed hybridization gap energy of 4 meV comparable to its traditional double quantum well counterpart. Gate voltage depen
Photoluminescence spectra, shows that monolayer Transition-metal dichalcogenides (MLTMDCs), possess charged exciton binding energies, conspicuously similar to the energy of optical phonons. This enigmatic coincidence has offered opportunities to inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adf6d91b52e3040bb4c4dd2ed6de38e7
Autor:
Maximilian Beiser, Hermann Detz, Aaron Maxwell Andrews, Karl Unterrainer, Sebastian Schönhuber, Martin A. Kainz, Gottfried Strasser, M. Giparakis, Werner Schrenk, Benedikt Limbacher, Gérald Bastard
Publikováno v:
2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
The active region of a terahertz quantum cascade laser with two optical transitions is studied. The population of upper laser states, which correspond to 3.4 and 3.8 THz, are investigated at different operating temperatures and in a strong magnetic f
Autor:
L. Worschech, S. Schmid, Fabian Hartmann, Martin Kamp, Sven Höfling, P. Pfeffer, Gérald Bastard, E. Batke, Georg Knebl
The work was supported by the DFG (project Ka2318/5-1) and the Elite Network of Bavaria within the graduate program “Topological Insulators”. We study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::662953d2bb655a9437c6cf66d111bf21
https://hdl.handle.net/10023/15511
https://hdl.handle.net/10023/15511
Autor:
G. Springholz, T. Phuphachong, Yves Guldner, Badih A. Assaf, L. A. de Vaulchier, G. Bauer, Gérald Bastard, G. Krizman, Robson Ferreira
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (7), ⟨10.1103/PhysRevB.98.075303⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (7), ⟨10.1103/PhysRevB.98.075303⟩
Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27cdfe3bc4ea262976289a28a1811728
Autor:
L. A. de Vaulchier, G. Bauer, Robson Ferreira, G. Springholz, Yves Guldner, Badih A. Assaf, Milan Orlita, G. Krizman, Thanyanan Phuphachong, Gérald Bastard
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (16)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (16), ⟨10.1103/PhysRevB.98.161202⟩
HAL
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (16)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (16), ⟨10.1103/PhysRevB.98.161202⟩
HAL
In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level spectroscopy on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b45ffedc4e637573e655343b2f1f1345
Publikováno v:
Advanced Textbooks in Physics ISBN: 9781786343017
Quantum States and Scattering in Semiconductor Nanostructures
Quantum States and Scattering in Semiconductor Nanostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c35a8f824de4df755427bd41e690b16
https://doi.org/10.1142/9781786343031_0007
https://doi.org/10.1142/9781786343031_0007
Publikováno v:
Advanced Textbooks in Physics ISBN: 9781786343017
Quantum States and Scattering in Semiconductor Nanostructures
Quantum States and Scattering in Semiconductor Nanostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8edd33e1b73521dd8cd4052c64b2fd90
https://doi.org/10.1142/9781786343031_0004
https://doi.org/10.1142/9781786343031_0004
Publikováno v:
Advanced Textbooks in Physics ISBN: 9781786343017
Quantum States and Scattering in Semiconductor Nanostructures
Quantum States and Scattering in Semiconductor Nanostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e38db81954f8a8e715aebd7018b3c2
https://doi.org/10.1142/9781786343031_0002
https://doi.org/10.1142/9781786343031_0002
Publikováno v:
Advanced Textbooks in Physics ISBN: 9781786343017
Quantum States and Scattering in Semiconductor Nanostructures
Quantum States and Scattering in Semiconductor Nanostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1f3249a1feec585fbb1c4a8f130cc6
https://doi.org/10.1142/9781786343031_0011
https://doi.org/10.1142/9781786343031_0011