Zobrazeno 1 - 10
of 319
pro vyhledávání: '"Gázquez J"'
Autor:
Rastogi, A., Li, Z., Singh, A. V., Regmi, S., Peters, T., Bougiatioti, P., Meier, D. Carsten né, Mohammadi, J. B., Khodadadi, B., Mewes, T., Mishra, R., Gazquez, J., Borisevich, A. Y., Galazka, Z., Uecker, R., Reiss, G., Kuschel, T., Gupta, A.
Publikováno v:
Phys. Rev. Applied 14, 014014 (2020)
Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $\mu$m) are grown by pulsed laser de
Externí odkaz:
http://arxiv.org/abs/2006.00777
Autor:
Zhang, Q., Sánchez-garcia, D., Desgarceaux, R., Gomez, A., Escofet-Majora, P., Oró-soler, J., Gazquez, J., Larrieu, G., Charlot, B., Gich, M., Carretero-Genevrier, A.
The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we report unprecedented large-scale fabrication of ordered arrays of piezoele
Externí odkaz:
http://arxiv.org/abs/1908.07016
Autor:
Lyu, J., Fina, I., Bachelet, R., Saint-Girons, G., Estandia, S., Gazquez, J., Fontcuberta, J., Sanchez, F.
Publikováno v:
Applied Physics Letters 114, 222901 (2019)
SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crys
Externí odkaz:
http://arxiv.org/abs/1906.01837
Autor:
Apreutesei, M., Debord, R., Bouras, M., Regreny, P., Botella, C., Benamrouche, A., Carretero-Genevrier, A., Gazquez, J., Grenet, G., Pailhes, S., Saint-Girons, G., Bachelet, R.
High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atom
Externí odkaz:
http://arxiv.org/abs/1703.09451
Autor:
Kriegner, D., Vyborny, K., Olejnik, K., Reichlova, H., Novak, V., Marti, X., Gazquez, J., Saidl, V., Nemec, P., Volobuev, V. V., Springholz, G., Holy, V., Jungwirth, T.
Publikováno v:
Nature Communications 7,11623 (2016)
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative
Externí odkaz:
http://arxiv.org/abs/1508.04877
Autor:
Wadley, P., Novák, V., Campion, R. P., Rinaldi, C., Martí, X., Reichlová, H., Zelezný, J., Gazquez, J., Roldan, M. A., Varela, M., Khalyavin, D., Langridge, S., Kriegner, D., Máca, F., Masek, J., Bertacco, R., Holy, V., Rushforth, A. W., Edmonds, K. W., Gallagher, B. L., Foxon, C. T., Wunderlich, J., Jungwirth, T.
Publikováno v:
Nat. Commun. 4:2322
Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the ep
Externí odkaz:
http://arxiv.org/abs/1402.3624
Autor:
Herranz, G., Bergeal, N., Lesueur, J., Gazquez, J., Scigaj, M., Dix, N., Sanchez, F., Fontcuberta, J.
The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on interface properti
Externí odkaz:
http://arxiv.org/abs/1305.2411
Autor:
Petti, D., Albisetti, E., Reichlová, H., Gazquez, J., Varela, M., Molina-Ruiz, M., Lopeandía, A. F., Olejník, K., Novák, V., Fina, I., Dkhil, B., Hayakawa, J., Marti, X., Wunderlich, J., Jungwirth, T., Bertacco, R.
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the resistance up to 1
Externí odkaz:
http://arxiv.org/abs/1302.3837
Autor:
Wadley, P., Crespi, A., Gazquez, J., Roldan, M. A., Garcia, P., Novak, V., Campion, R., Jungwirth, T., Rinaldi, C., Marti, X., Holy, V., Frontera, C., Rius, J.
We present a combined experimental and computational method which enables the precise determination of the atomic positions in a thin film using CuK{\alpha} radiation, only. The capabilities of this technique surpass simple structure refinement and a
Externí odkaz:
http://arxiv.org/abs/1301.5227
Autor:
Cantoni, C., Gazquez, J., Granozio, F. Miletto, Oxley, M. P., Varela, M., Lupini, A. R., Pennycook, S. J., Aruta, C., di Uccio, U. Scotti, Perna, P., Maccariello, D.
Publikováno v:
Advanced Materials 24, 3952 (2012)
The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched fr
Externí odkaz:
http://arxiv.org/abs/1206.4578