Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Gámiz Pérez, Francisco Jesús"'
Autor:
Donetti, Luca, Márquez González, Carlos, Navarro Moral, Carlos, Medina Bailón, Cristina, Padilla De la Torre, José Luis, Sampedro Matarín, Carlos, Gámiz Pérez, Francisco Jesús
Publikováno v:
Solid-State Electronics
In this work, we employ the results of atomistic DFT calculation to extract useful parameters for the simulation of few-layers MoS2 structures with traditional TCAD tools. In particular, we focus on the charge distribution, which allows us to obtain
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
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This work was supported in part by the REMINDER European Project under Grant 687931; in part by the Ministry of Trade, Industry, & Energy (MOTIE)under Grant 10080526; and in part by the Korea Semiconductor Research Consortium (KSRC) Support Program f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::97df7fb4fed2be3908f0d62a18e726fb
http://hdl.handle.net/10481/70206
http://hdl.handle.net/10481/70206
Autor:
Ávila Gómez, Jorge Pablo, Galdón Gil, José Carlos, Salazar Moreira, Norberto José, Recio Muñoz, María Isabel, Márquez González, Carlos, Navarro Moral, Carlos, Gámiz Pérez, Francisco Jesús
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
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This work has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 895322, from the Spanish Program (TEC2017-89800-R). SUPERA COVID-19 Fund and CRUE-Santander
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::78174f8de2b18c6da8a6dce1f1fa6ba8
http://hdl.handle.net/10481/72656
http://hdl.handle.net/10481/72656
Autor:
Navarro Moral, Carlos, Gámiz Pérez, Francisco Jesús, Márquez González, Carlos, Sampedro Matarín, Carlos, Donetti, Luca, Navarro Mora, Santiago
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
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Digibug: Repositorio Institucional de la Universidad de Granada
Universidad de Granada (UGR)
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Digibug: Repositorio Institucional de la Universidad de Granada
Universidad de Granada (UGR)
Número de publicación: 2 770 473
Número de solicitud: 201831304
Procedimiento de detección de radiación y partículas empleando un diodo semiconductor por modulación de bandas de energía. La presente invención describe un procedimie
Número de solicitud: 201831304
Procedimiento de detección de radiación y partículas empleando un diodo semiconductor por modulación de bandas de energía. La presente invención describe un procedimie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3f35192cd55abdb91af3d82eeddfbc0b
http://hdl.handle.net/10481/66297
http://hdl.handle.net/10481/66297
Autor:
Medina Bailón, Cristina, Sadi, T., Sampedro Matarín, Carlos, Padilla García, José Luis, Donetti, Luca, Georgiev, Vihar, Gámiz Pérez, Francisco Jesús, Asenov, Asen
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
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From a modeling point of view, the inclusion of adequate physical phenomena is mandatory when analyzing the behavior of new transistor architectures. In particular, the high electric field across the ultra-thin insulator in aggressively scaled transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b06c7b669d28ace5d94940bd11fcfc0c
https://aaltodoc.aalto.fi/handle/123456789/39396
https://aaltodoc.aalto.fi/handle/123456789/39396
Autor:
Padilla De la Torre, José Luis, Medina Bailón, Cristina, Alper, C, Gámiz Pérez, Francisco Jesús, Ionescu, Adrian Mihai
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
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Electron–Hole Bilayer Tunneling Field-Effect Transistors are typically based on band-to-band tunneling processes between two layers of opposite charge carriers where tunneling directions and gate-induced electric fields are mostly aligned (so-calle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::455865ac4574a0fbfeff663268284d74
http://hdl.handle.net/10481/55899
http://hdl.handle.net/10481/55899
Autor:
Martínez Blanque, Celso Jesús, García Ruiz, Francisco Javier, Donetti, Luca, Toral López, Alejandro, González-Medina, Jose María, González Marín, Enrique, Godoy Medina, Andrés, Gámiz Pérez, Francisco Jesús
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
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The electrostatic behavior of p-type nanowires made of antimonide III-V materials (InSb and GaSb) is analyzed by means of a self-consistent solution of the Poisson and Schrödinger equations, under the k·p approximation. The results are compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::96a4bb412faa46ffe9a71b5e671383f2
http://hdl.handle.net/10481/58489
http://hdl.handle.net/10481/58489
Autor:
Martínez Blanque, Celso Jesús, Toral López, Alejandro, González-Medina, Jose María, González Marín, Enrique, García Ruiz, Francisco Javier, Godoy Medina, Andrés, Gámiz Pérez, Francisco Jesús
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
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III-V nanowires (NWs) have attracted extensive research interests in recent years because of their unique physical properties, being recognized as promising building blocks for the next generation of electronics and photonics. Most of the works up-to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7ee8d921c666329e5e7d7b43bfe84218
http://hdl.handle.net/10481/58475
http://hdl.handle.net/10481/58475
Autor:
González-Medina, Jose María, Garcia Ruiz, Francisco Javier, Godoy Medina, Andrés, González Marín, Enrique, Gámiz Pérez, Francisco Jesús
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
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We study the electron mobility in Metal-Insulator-Semiconductor Field-Effect-Transistors which use multi-layer MoS 2 as channel. The electrostatic behavior is calculated by self-consistently solving the 1D Poisson and Schrödinger equations under the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8185a3412884927275314931bae47796
http://hdl.handle.net/10481/50960
http://hdl.handle.net/10481/50960
Autor:
García Ruiz, Francisco Javier, González Marín, Enrique, Godoy Medina, Andrés, Tienda Luna, Isabel María, Martínez Blanque, Celso Jesús, Gámiz Pérez, Francisco Jesús
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
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This work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::fdbe2d02189e79d9f5582071222d78d4
http://hdl.handle.net/10481/58474
http://hdl.handle.net/10481/58474