Zobrazeno 1 - 10
of 65
pro vyhledávání: '"G, Salmini"'
Publikováno v:
Microelectronics Reliability. 41:1603-1607
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::722aa3af6da50fdc562d6dab06f79516
https://doi.org/10.1016/s0026-2714(01)00199-8
https://doi.org/10.1016/s0026-2714(01)00199-8
Publikováno v:
Microelectronics Reliability. 40:1753-1757
FIB/TEM images of failed laser diodes showed features compatible with local fusion and recrystallization around extended defect of the strained active layer. The shape of the melted area calls for excess temperature along single straight lines, compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29416b9d9e498e628d401dac657c87b1
https://doi.org/10.1016/s0026-2714(00)00192-x
https://doi.org/10.1016/s0026-2714(00)00192-x
Publikováno v:
Microelectronics Reliability. 39:1067-1071
The procedure of measuring the I(V) characteristics of laser diodes at fixed time steps of a constant current life-test is revised. The possibility of using the test equipment itself to extract the characteristics is investigated and demonstrated. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c9c29cc966900f62a8e9a516adc3ef
https://doi.org/10.1016/s0026-2714(99)00148-1
https://doi.org/10.1016/s0026-2714(99)00148-1
Autor:
G. Salmini, R. De Palo, F. Magistrali, Maria Benedetta Casu, Massimo Vanzi, Annalisa Bonfiglio
Publikováno v:
Microelectronics Reliability. 38:1215-1220
The basic theory for Recombination Enhanced Defect Reaction (REDR) as responsible for sudden failures in 980 nm SL SQW InGaAs pump laser diodes is here tested on experimental constant-current life-test data. A link between the occurrence of long term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a16fa258ac524451e440d6d06359bc
https://doi.org/10.1016/s0026-2714(98)00073-0
https://doi.org/10.1016/s0026-2714(98)00073-0
Publikováno v:
Microelectronics Reliability. 38:767-771
A different reading of the available I–V curves is proposed for laser diodes whose characteristics display some degradation. In particular, the usual monitoring of the optical power P and of the threshold current Ith is complemented by the inspecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ce1bc181445e1345ae4d773ca355ea3
https://doi.org/10.1016/s0026-2714(98)00021-3
https://doi.org/10.1016/s0026-2714(98)00021-3
Publikováno v:
Scopus-Elsevier
The sensitivity of InGaAsP/InP buried crescent lasers to ESD phenomena was deeply analysed, starting from the need to explain and prevent sudden failures during equipment manufacturing and test. Failure analysis allowed us to localize the degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c254bf37ef9b776b07afaf06e0052514
https://doi.org/10.1002/qre.4680080319
https://doi.org/10.1002/qre.4680080319
Publikováno v:
Scopus-Elsevier
The authors present a case history of electrostatic discharge (ESD)-related latent failures of InGaAsP/InP laser diodes. A draft of the device structure and technology prefaces the failure analysis flow, which is illustrated as it was applied to cata
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1710d07fb90650267c61eff0e56f043
https://doi.org/10.1109/relphy.1991.146018
https://doi.org/10.1109/relphy.1991.146018
Publikováno v:
Micron (Oxford, England : 1993). 31(3)
Electron Microscopy on life-tested 980 nm SL SQW InGaAs/AlGaAs laser diodes is able to find and analyze lattice defects responsible for the detected failures. Anyway, the origin and evolution of those defects remains questionable. Only the comparativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd416ee42ccbf71479eb1e4f69384a6b
https://pubmed.ncbi.nlm.nih.gov/10702975
https://pubmed.ncbi.nlm.nih.gov/10702975
Autor:
G. Salmini, Angela Serpe, Paola Deplano, Emanuele F. Trogu, R. De Palo, Massimo Vanzi, Annalisa Bonfiglio, P. Salaris
Publikováno v:
International Symposium for Testing and Failure Analysis.
A specific problem in failure analysis of InGaAs/ AlGaAs laser diodes asked for a deprocessing tool able to selectively etch gold from a Ti/Pt/Au triple metal layer. Attempts made by the usual I2/KI etch confirmed the damage that it causes to the cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5104ec08f8d75478e4a922d5cdfc1ef
https://doi.org/10.31399/asm.cp.istfa1999p0211
https://doi.org/10.31399/asm.cp.istfa1999p0211
REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes
Publikováno v:
1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98.
Recombination-enhanced-defect-reaction (REDR) (Kymerling, Solid State Electron. vol 21, pp. 1391-1401, 1978) has been recently proposed (Magistrali et al. 1997) as the driving mechanism for sudden failures in 980 nm SL SQW InGaAs pump laser diodes fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0efcccf4f88af208d2bf4d6478caf0d
https://doi.org/10.1109/relphy.1998.670459
https://doi.org/10.1109/relphy.1998.670459