Zobrazeno 1 - 10
of 178
pro vyhledávání: '"G, Queirolo"'
Publikováno v:
Active and Passive Electronic Components, Vol 15, Iss 1, Pp 9-26 (1992)
In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient
Externí odkaz:
https://doaj.org/article/ef191846488d4eeababefebc56782d36
Publikováno v:
Applied Surface Science. :437-440
Dynamic secondary ion mass spectrometry (SIMS) is commonly considered an important analytical technique to study the materials used for microelectronics. Direct analyses on electrically tested structures are hard to perform because of strict requirem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319d430dbc410898cdcd5054ba990eb5
https://doi.org/10.1016/s0169-4332(02)00696-7
https://doi.org/10.1016/s0169-4332(02)00696-7
Publikováno v:
Materials Science and Engineering: B. :96-99
Solid-state transformations occurring in thin films can be studied by directing a laser beam on to the sample surface and measuring the reflected intensity by means of a photodiode. The technique, called Time-Resolved Reflectivity, is an in-situ tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82dccfe8847a7738d5c7055e2dd26b87
https://doi.org/10.1016/s0921-5107(01)00981-3
https://doi.org/10.1016/s0921-5107(01)00981-3
Autor:
F. Cazzaniga, Giampiero Ottaviani, G. Queirolo, Carlo Emanuele Nobili, Federico Corni, Rita Tonini
Publikováno v:
Solid State Phenomena. :291-296
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6b157027701064d71a33f60a445b20a
https://doi.org/10.4028/www.scientific.net/ssp.82-84.291
https://doi.org/10.4028/www.scientific.net/ssp.82-84.291
Autor:
T. Marangon, G. Mastracchio, G. Queirolo, D. Giubertoni, A. Sabbadini, R. Cocchi, G. Ottaviani
Publikováno v:
Journal of Applied Physics. 89:6079-6084
The interactions occurring in a Ti–Si bilayer have been investigated by in situ resistance measurements and the reaction products have been analyzed by complementary techniques, such as x-ray diffraction, Auger electron spectroscopy, and MeV 4He+ R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c53416b5defdddf33395f2c0e42e7a
https://doi.org/10.1063/1.1352556
https://doi.org/10.1063/1.1352556
Publikováno v:
Microelectronic Engineering. 55:93-99
In titanium silicide, the transition from the high (C49) to the low resistivity phase (C54) is difficult in small areas. This has been attributed in the literature to the lack of the nucleation sites for phase transition in small areas [1] . The mean
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf0621ccbb8b8b6f156f45366aeadf9e
https://doi.org/10.1016/s0167-9317(00)00433-0
https://doi.org/10.1016/s0167-9317(00)00433-0
Autor:
G. Casati, G. Queirolo, F. Cazzaniga, G. Pavia, S. Alberici, A. Sabbadini, V. Cusi, C. Bresolin
Publikováno v:
Microelectronic Engineering. 55:205-211
MOCVD-TiN deposition from TDMAT precursor consists of two steps: a deposition and a plasma treatment in hydrogen. The effects of different plasma treatment times are tested on high aspect ratio contacts, finding an increase in the number of high resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5f2464f0292e9c95914e8bbc03bec9a
https://doi.org/10.1016/s0167-9317(00)00449-4
https://doi.org/10.1016/s0167-9317(00)00449-4
Publikováno v:
Materials Science and Engineering: B. 73:173-177
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is one of the most promising candidates for high sensitivity surface analysis, in line with the requirements reported by the 1997 Semiconductor Industry Association (SIA) roadmap. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c662c31e9c9bdf5cdc562a44e33fc4e4
https://doi.org/10.1016/s0921-5107(99)00456-0
https://doi.org/10.1016/s0921-5107(99)00456-0
Autor:
E Bellandi, M. L. Polignano, A. Sabbadini, G. Queirolo, F Zanderigo, F Pipia, D Lodi, Francesco Priolo
Publikováno v:
Scopus-Elsevier
In this paper we present a systematic comparison among the most common methods (surface photovoltage, Elymat and microwave-detected photoconductive decay) for lifetime measurements. The possibility to identify contaminants and to quantitatively evalu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26e8cbfbfcab28df8c198e72d974cc59
https://doi.org/10.1016/s0921-5107(98)00192-5
https://doi.org/10.1016/s0921-5107(98)00192-5
Autor:
Carlo Emanuele Nobili, Gf Cerofolini, G. Queirolo, Giampiero Ottaviani, G Calzolari, Federico Corni, Rita Tonini
Publikováno v:
Physical Review B. 56:7331-7338
Thermal desorption measurements are performed on (100)-oriented $p$-type Si wafers implanted with He ions at 20 keV. The doses have been selected in order to produce crystal damage avoiding the formation of detectable bubbles. The He effusion kinetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f71f889ebc72701db7481327b7462bf7
https://doi.org/10.1103/physrevb.56.7331
https://doi.org/10.1103/physrevb.56.7331