Zobrazeno 1 - 10
of 734
pro vyhledávání: '"G, Molas"'
Autor:
S. Bianchi, I. Muñoz-Martin, E. Covi, A. Bricalli, G. Piccolboni, A. Regev, G. Molas, J. F. Nodin, F. Andrieu, D. Ielmini
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-14 (2023)
A big challenge for artificial intelligence is to gain the ability of learning by experience like biological systems. Here Bianchi et al. propose a hardware neural network based on resistive-switching synaptic arrays which dynamically adapt to the en
Externí odkaz:
https://doaj.org/article/1fd89242574943b3ba52bdec76007f2c
Autor:
L. Reganaz, D. Deleruyelle, Q. Rafhay, J. Minguet Lopez, N. Castellani, J. F. Nodin, A. Bricalli, G. Piccolboni, G. Molas, F. Andrieu
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
F. Jebali, E. Muhr, M. Alayan, M.C. Faye, D. Querlioz, F. Andrieu, E. Vianello, G. Molas, M. Bocquet, J.M. Portal
Publikováno v:
34 TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS)
34 TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), Mar 2022, Online, France. pp.1-5, ⟨10.1109/ICMTS50340.2022.9898162⟩
34 TH INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), Mar 2022, Online, France. pp.1-5, ⟨10.1109/ICMTS50340.2022.9898162⟩
This paper presents an embedded measurement circuit dedicated to the extraction of the SET switching time of RRAM memory cells. A brief overview of the measurement circuit, designed in a hybrid 130nm technology with HfO2 BEoL RRAMs, is given with emp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2774729f1d63ab35dee1c5175e2155d6
https://hal-amu.archives-ouvertes.fr/hal-03971049
https://hal-amu.archives-ouvertes.fr/hal-03971049
Autor:
T Rovira, M de Castro Julve, T Gili Bigatà, G Gómez Llanes, Y Campos García, G Molas Ferrer, B López García, M Gómez-Valent
Publikováno v:
Section 7: Post Congress additions.
Akademický článek
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Autor:
N. Castellani, G. Molas, Marc Bocquet, L. Grenouillet, J-M. Portal, L. Reganaz, Etienne Nowak, T. Magis, C. Carabasse, G. Navarro, D. Deleruyelle, Mathieu Bernard, J. Minguet Lopez
Publikováno v:
2021 IEEE International Memory Workshop (IMW)
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩
International audience; In this paper, we address the scalability of GeSeSbN based Ovonic Threshold Switch selector for high density crossbar integration. Impact of cell size down to 80nm on selector electrical characteristics, typical switching volt
Autor:
Amir Regev, D. Green, G. Piccolboni, Alessandro Bricalli, W. Goes, P. Blaise, G. Molas, J. F. Nodin
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention besides the resistive switching and
Autor:
D. Alfaro Robayo, L. Grenouillet, N. Castellani, Mathieu Bernard, Etienne Nowak, G. Molas, J. Sandrini, C. Carabasse, L. Hudeley, D. Deleruyelle, J-M. Portal, J. Minguet Lopez, Marc Bocquet, G. Navarro
Publikováno v:
2021 IEEE International Reliability Physics Symposium (IRPS)
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-6, ⟨10.1109/IRPS46558.2021.9405195⟩
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405195⟩
IRPS
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-6, ⟨10.1109/IRPS46558.2021.9405195⟩
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405195⟩
IRPS
International audience; 1S1R operation behavior and read margin variability are elucidated for the first time to our knowledge. To this aim, an extensive experimental study is performed on HfO2 OxRAM technology co-integrated with GSSN-based Ovonic Th
Autor:
M.-C. Cyrille, R. Crochemore, G. Molas, T. Magis, E. Nowak, Jean-Francois Nodin, A. Persico, J. Sandrini, N.-P. Tran, N. Castellani
Publikováno v:
VLSI-TSA-2020 International Symposium on VLSI Technology, Systems and Applications
VLSI-TSA-2020 International Symposium on VLSI Technology, Systems and Applications, Aug 2020, Hsinchu, Taiwan. pp.33-34, ⟨10.1109/VLSI-TSA48913.2020.9203694⟩
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
VLSI-TSA-2020 International Symposium on VLSI Technology, Systems and Applications, Aug 2020, Hsinchu, Taiwan. pp.33-34, ⟨10.1109/VLSI-TSA48913.2020.9203694⟩
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
978-1-7281-4232-6/20; International audience; HfO$_2$-based OxRAMs with various metal stacks in the inferior VIA of bottom electrode were fabricated. We demonstrated for the first time that the metal stack of TiN PVD (physical vapour deposition), fol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09fc1736aaa7d55d3a098eef1c8b36c5
https://hal-cea.archives-ouvertes.fr/cea-03027403/file/EU006.pdf
https://hal-cea.archives-ouvertes.fr/cea-03027403/file/EU006.pdf
Autor:
Alessandro Bricalli, Daniele Ielmini, Erika Covi, E. Nowak, Amir Regev, G. Piccolboni, G. Molas, S. Bianchi, Irene Munoz-Martin, Jean-Francois Nodin
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Biological systems autonomously evolve to maximize their efficiency in a continually changing world. On the other hand, artificial neural networks (ANNs) outperform the human ability of object recognition but cannot acquire new information without fo