Tuberculose après allogreffe de moelle: étude rétrospective multicentrique nationale sur 10 ans

Autor: G. Imbert de Trémiolles, C. Rouzaud, B. Ranque, S. Nguyen, E. Brissot, R. Redjoul, F. Suarez, F. Lanternier, O. Lortholary, E. Lafont

Publikováno v: Médecine et Maladies Infectieuses Formation. 2:S91

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dea15bdc42c9721a6da097880fad4b2c
https://doi.org/10.1016/j.mmifmc.2023.03.218

Moisture diffusion in plasma-enhanced chemical vapor deposition dielectrics characterized with three techniques under clean room conditions

Autor: Du Vo-Thanh, Catherine Chaton, Névine Rochat, Geneviève Duchamp, G. Imbert, Vivien Cartailler, Hélène Fremont, Daniel Benoit

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2020, 698, pp.137874-. ⟨10.1016/j.tsf.2020.137874⟩
Thin Solid Films, 2020, 698, pp.137874-. ⟨10.1016/j.tsf.2020.137874⟩
Thin Solid Films, 2020, ⟨10.1016/j.tsf.2020.137874⟩

Absorption of moisture by thin dielectric materials alters their properties and can cause several reliability issues. Even at standard room temperature and low humidity level, some dielectric materials are sensitive to moisture. In this study, moistu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::942bb62d4d82ad1d6f978f756e37f5f3
https://hal.archives-ouvertes.fr/hal-03489597

Moisture Diffusion in Dense SiO2 and Ultra Low k Integrated Stacks

Autor: G. Imbert, Catherine Chaton, Marie-Astrid Pin, Jean Baptiste Moulard, D. Ney, Veronique Guyader, P. Lamontagne, Geneviève Duchamp, Hélène Fremont, Daniel Benoit, Vivien Cartailler, Mustapha Rafik, Marc Juhel

Publikováno v: 2019 IEEE International Integrated Reliability Workshop (IIRW).

The impact of moisture diffusion on two types of fully integrated stacks was investigated. One of them with dense SiO 2 layers and the other with ultra low k (ULK), both of which are predominantly used in BEOL (Back End of Line) as inter layer dielec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54352de11f340355c948bf3f652d8d46
https://doi.org/10.1109/iirw47491.2019.8989874

Warpage reduction using dielectric layers stress tuning: From analytical model to 3D integration of large die on ceramic substrate

Autor: G. Imbert, Laetitia Castagne, Gilles Simon, F. Casset, Pascal Chevalier, N. Chevrier, B. Kholti, L. Toffanin, Sébastien Petitdidier, F. Bailly, Jp. Pierrel, D. Mermin, R. Franiatte, C. Ferrandon

Publikováno v: 2016 6th Electronic System-Integration Technology Conference (ESTC).

A mechanical study of silicon interposer bow reduction, from wafer level manufacturing to large die stacking including analytical modeling, is presented in this paper. Indeed, understanding and reducing the warpage of a dissymmetrical substrate is fu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5850f68bc6ecd5229641ea5556d1a7a1
https://doi.org/10.1109/estc.2016.7764485

Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyond

Autor: Laurent-Luc Chapelon, K. Hamioud, Joaquim Torres, P. Brun, M. Vilmay, H. Chaabouni, G. Imbert, Alexis Farcy, M. Mellier

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2008, pp.85 Issue: 10 (2008) 2098-2101
Microelectronic Engineering, 2008, pp.85 Issue: 10 (2008) 2098-2101

Deposited on a porous a-SiOC:H intermetal dielectric (IMD), a dense a-SiOC:H cap was successfully integrated in a C45 dual damascene architecture. The paper demonstrates that, stopping the CMP with around 10nm of the cap left, the IMD integrity is pr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dff207498c7e2eec25c77514e5f1652f
https://doi.org/10.1016/j.mee.2008.04.043