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Autor:
Ioannis Deretzis, Alessio Campo, Antonino La Magna, Giuseppe G. N. Angilella, Salvatore Francesco Lombardo, G. Garozzo
Publikováno v:
IEEE Transactions on Nanotechnology. 16:790-797
In this paper, we discuss a multiscale method for process simulations with atomic resolution applied to plasma etching. We demonstrate that the accurate prediction of microstructural modifications, as a function of the equipment parameters, can be ac
Publikováno v:
Computational materials science 54 (2012): 227–235. doi:10.1016/j.commatsci.2011.10.027
info:cnr-pdr/source/autori:Chiaramonte L, Colombo R, Fazio G, Garozzo G, La Magna A/titolo:A numerical method for the efficient atomistic simulation of the plasma-etch of nano-patterned structures/doi:10.1016%2Fj.commatsci.2011.10.027/rivista:Computational materials science/anno:2012/pagina_da:227/pagina_a:235/intervallo_pagine:227–235/volume:54
info:cnr-pdr/source/autori:Chiaramonte L, Colombo R, Fazio G, Garozzo G, La Magna A/titolo:A numerical method for the efficient atomistic simulation of the plasma-etch of nano-patterned structures/doi:10.1016%2Fj.commatsci.2011.10.027/rivista:Computational materials science/anno:2012/pagina_da:227/pagina_a:235/intervallo_pagine:227–235/volume:54
In this work, we present a numerical model aimed to accurately and efficiently simulate the plasma dry-etching process in nano-patterned samples. The method is designed to reproduce the physical phenomena and control the parameters involved in the pr
Publikováno v:
Materials science & engineering. B, Solid-state materials for advanced technology 102 (2003): 43–48.
info:cnr-pdr/source/autori:La Magna A., D'Arrigo G., Garozzo G., Spinella C./titolo:Computational analysis of etched profile evolution for the derivation of 2D dopant density maps in silicon/doi:/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2003/pagina_da:43/pagina_a:48/intervallo_pagine:43–48/volume:102
info:cnr-pdr/source/autori:La Magna A., D'Arrigo G., Garozzo G., Spinella C./titolo:Computational analysis of etched profile evolution for the derivation of 2D dopant density maps in silicon/doi:/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2003/pagina_da:43/pagina_a:48/intervallo_pagine:43–48/volume:102
The numerical simulation of the etched surface evolution is applied to the selective (chemical and electrochemical) etching dopant delineation technique. The analysis of the etched sample section, obtained by means of transmission electron microscopy
Autor:
G. Garozzo
Publikováno v:
Whiplash Injuries ISBN: 9788847054851
When we speak of Chinese medicine, there is always a little bit of prejudice, above all among scholars of Western medicine, and partly also in the world of the end user (the patient), who willingly not overlooking to this discipline and if it does, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d617271c4b614a655c8a0f2994a7311
https://doi.org/10.1007/978-88-470-5486-8_36
https://doi.org/10.1007/978-88-470-5486-8_36
Autor:
P. Benedetti Panici, S. Tateo, G. Mangili, G. Scambia, G. Garozzo, E. Campagnutta, A. Monaco, M. Franchi, F. Raspagliesi, C. Merisio, P. Scollo, G. Giardina, N. Ragni, C. Scarabelli, F. Parazzini, M. Atlante, F. Maneschi, PELUSI, GIUSEPPE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::c64b749ab8af450201f7b333e8c7644e
http://hdl.handle.net/11585/20168
http://hdl.handle.net/11585/20168
Publikováno v:
European Journal of Hospital Pharmacy. 23:A160.3-A161
Background In relation to the regional project UFAONCOEMA, at the enterprise level, a set of goals were fixed. They concerned: efficacy, efficiency, quality and performance safety. Among the quality goals, monitoring of waiting time for antiblastic c
Publikováno v:
Journal of Obstetrics and Gynaecology. 11:277-280
SummarySummaryThree hundred and sixty healthy Sicilian women who attended a private gynaecologist between February and July 1987 for a routine annual cervical smear and breast examination completed a semistruclured verbal questionnaire on the frequen
Publikováno v:
IEEE transactions on semiconductor manufacturing 18 (2005): 355–358.
info:cnr-pdr/source/autori:Garozzo G., Beffumo F., La Magna A./titolo:Notching effect on metal etch: A very simple predictive model/doi:/rivista:IEEE transactions on semiconductor manufacturing/anno:2005/pagina_da:355/pagina_a:358/intervallo_pagine:355–358/volume:18
info:cnr-pdr/source/autori:Garozzo G., Beffumo F., La Magna A./titolo:Notching effect on metal etch: A very simple predictive model/doi:/rivista:IEEE transactions on semiconductor manufacturing/anno:2005/pagina_da:355/pagina_a:358/intervallo_pagine:355–358/volume:18
In this paper, a very simple model of notching effect is reported. From an engineering point of view, the notching effect is an undercut between bottom of metal strip and stop layer (generally oxide) which can be observed in a Cl/sub 2/-BCl/sub 3/ me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec25e73a5d9b65acaca2f255e2db6944
https://publications.cnr.it/doc/35532
https://publications.cnr.it/doc/35532