Zobrazeno 1 - 10
of 198
pro vyhledávání: '"G, Galvagno"'
Publikováno v:
2020 IEEE/PES Transmission and Distribution Conference and Exposition (T&D).
Condition assessment of MV switchboards requires effective, but not expensive, solutions to become a common practice. On the other hand, failure of a switchboard component can cause cascade effects and outage of other apparatus, in addition to signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1288cdbdab2c895d29b542b441450a
https://doi.org/10.1109/td39804.2020.9300023
https://doi.org/10.1109/td39804.2020.9300023
Publikováno v:
Water Research. 96:84-93
The objective of this research was to assess specific side-stream treatment processes for biodegradation and precipitation of dissolved nutrients in dewatering centrate. In this study, characterization was made of a conventional suspended growth deam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b01fd0c126b09c85ad36aa1d15dff416
https://doi.org/10.1016/j.watres.2016.03.036
https://doi.org/10.1016/j.watres.2016.03.036
Autor:
Cigdem Eskicioglu, S Anderson, Timothy Abbott, M. Abel-Denee, A Lambrecht, G Stevens, G. Galvagno
Publikováno v:
Proceedings of the Water Environment Federation. 2016:1754-1768
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b43ab4ff182b74764b986d19772614a5
https://doi.org/10.2175/193864716819714717
https://doi.org/10.2175/193864716819714717
Publikováno v:
Proceedings of the Water Environment Federation. 2014:1767-1782
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8311b61703d1809a2974c2453f0ec27
https://doi.org/10.2175/193864714815940523
https://doi.org/10.2175/193864714815940523
Akademický článek
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SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
Autor:
Gaetano Izzo, Gaetano Foti, Marco Mauceri, Lucia Calcagno, Giuseppe Abbondanza, Giuseppe Pistone, Francesco La Via, Gian Luca Valente, Danilo Crippa, G. Galvagno, Salvatore Di Franco, Laura M. S. Perdicaro, F. Portuese, Giuseppe Condorelli
Publikováno v:
Materials Science Forum. :123-126
The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e7fd98b7edc009cb9ad4aa161689e7e
https://doi.org/10.4028/www.scientific.net/msf.600-603.123
https://doi.org/10.4028/www.scientific.net/msf.600-603.123
Autor:
G. Galvagno, Giuseppe Abbondanza, Grazia Litrico, Giuseppe Pistone, Francesco La Via, A. Firrincieli, Marco Mauceri, F. Portuese, Salvatore Di Franco, Stefano Leone, Gaetano Izzo, Gaetano Foti, Giuseppe Condorelli, Lucia Calcagno
Publikováno v:
Materials Science Forum. :137-140
High growth rate of 4H-SiC epitaxial layers can be reached with the introduction of HCl in the deposition chamber. The effect of the Cl/Si ratio on this epitaxial growth process has been studied by optical and electrical measurements. Optical microsc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caaff3e1dce874cc4faf63464b8ae59b
https://doi.org/10.4028/www.scientific.net/msf.556-557.137
https://doi.org/10.4028/www.scientific.net/msf.556-557.137
Autor:
Giuseppe Abbondanza, Francesco La Via, Gian Luca Valente, Marco Mauceri, F. Portuese, Lucia Calcagno, Giuseppe Pistone, Giuseppe Condorelli, Gaetano Foti, G. Galvagno, Danilo Crippa, Stefano Leone, Salvatore Di Franco
Publikováno v:
Materials Science Forum. :157-160
The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89e27ea03db1945a62e3129e2e58ba4e
https://doi.org/10.4028/www.scientific.net/msf.556-557.157
https://doi.org/10.4028/www.scientific.net/msf.556-557.157
Autor:
Emanuele Rimini, A. La Ferla, P. K. Giri, Salvo Coffa, G. Galvagno, Vito Raineri, V. Privitera
Publikováno v:
Journal of Applied Physics. 89:4310-4317
Low-temperature photoluminescence (PL) spectroscopy, in conjunction with transmission electron microscopy (TEM) and optical microscopy (OM) have been carried out to investigate the origin of radiative recombination from various extended defects that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1720b3ae6bdc7c46b8084f2053976a4e
https://doi.org/10.1063/1.1357464
https://doi.org/10.1063/1.1357464
Publikováno v:
Materials Science and Engineering: B. 71:186-191
We have investigated the optical and structural characteristics of defect evolution during high-temperature annealing of keV-ion-implanted epitaxial silicon using optical microscopy (OM), photoluminescence (PL) spectroscopy and transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e899390f479e630afd062e049ca6358
https://doi.org/10.1016/s0921-5107(99)00372-4
https://doi.org/10.1016/s0921-5107(99)00372-4